Recent #DRAM news in the semiconductor industry

10 months ago
➀ Intel's shift to a more transparent strategy in technology announcements; ➁ The competition between Intel's PowerVia and TSMC's Super Power Rail; ➂ Andy Grove's philosophy of maintaining a 'healthy amount of paranoia'.
2nm3D IC3nmAIAI PCAI chipAMDASUSArmCPUChipletDRAMDellEDAEMIBEUVGDDRGPUGaNHBMHPCInfineonLinuxNPUNVIDIAPCIePrivacyRaspberry PiSEMICONDUCTORSK hynixSSDSwitchTIautomotivecoolingcybersecuritygamingiOSlaptopmemorymicrochipmonitorsoftware
10 months ago
➀ Kioxia Corporation and Nanya Technology have developed a low-power DRAM technology called OCTRAM, which uses oxide-semiconductor transistors for ultra-low leakage and high efficiency. The technology aims to significantly reduce power consumption in AI, post-5G communication, and IoT devices. ➁ The OCTRAM features a cylindrical-shaped InGaZnO vertical transistor as its cell transistor, offering enhanced memory density. ➂ The technology achieves a high 'on' current exceeding 15μA per cell and an 'off' current as low as 1aA per cell, reducing energy leakage to negligible levels.
DRAMenergy efficiency
11 months ago
➀ Compute Express Link (CXL) technology is expected to move from a niche to mainstream use in 2025; ➁ CXL's support for memory expansion is a significant driver, with various server and memory solutions now available; ➂ CXL 2.0 and future generations of PCIe/CXL will enable more advanced use cases like switching and dynamic memory allocation.
2nm3D IC3nmAIAI ChipAI PCAMDArmAsusCXLChipletCoolingDDR4DRAMDellEDAEMIBEUVGDDRGPUGaNHBMHPCInfineonIntelLaptopLinuxMicrochipNPUNVIDIAPCIePrivacyRaspberry PiSSDSoftwareSwitchTIXeonautomotivecpucybersecurityddr5iosmemorymonitorsemiconductorserver
11 months ago
➀ China experienced a decline in chip investment, with new investment deals dropping by 35.9% year-on-year in the first 11 months of 2024; ➁ The total funding decreased by 32.4%; ➂ ChangXin Memory and Unisoc were the largest and second-largest investors, respectively. JW Insights notes that the US semiconductor market surpassed China's in Q3, driven by massive AI infrastructure investments in the US.
AIChinaDRAMUNISOCinvestmentsemiconductor
11 months ago
➀ SEMI forecasts semiconductor manufacturing equipment sales to grow 6.5% year-on-year to $113 billion in 2024, with projections of $121 billion for 2025 and $139 billion for 2026. ➁ The wafer fab equipment (WFE) segment is expected to grow 5.4% to $101 billion in 2024, driven by DRAM, HBM, and China. ➂ Back-end equipment sales are projected to surge, with test equipment sales increasing 14.7% in 2025 and 18.6% in 2026.
ChinaDRAMEquipment SalesGrowthHBMKoreaNANDSEMITaiwanfoundryinvestmentmemorysemiconductor
11 months ago
➀ A class-action lawsuit alleges that UnitedHealthcare uses a faulty algorithm to deny patient coverage, filed by two now-deceased individuals. ➁ UnitedHealthcare CEO Brain Thompson was killed in Midtown Manhattan earlier this week, and the suspect is currently on the run. ➂ The lawsuit claims UnitedHealthcare pushed employees to use an algorithm with a 90% error rate to deny coverage.
2nm3D IC3nmAIAI PCAI chipAMDASUSArmCPUChipletDRAMDellEDAEMIBEUVGDDRGPUGaNHBMHPCInfineonLinuxNPUNVIDIAPCIePrivacyRaspberry PiSEMICONDUCTORSK hynixSSDSwitchTIautomotivecoolingcybersecuritygamingiOSlaptopmemorymicrochipmonitorsoftware
11 months ago
➀ The rise of RISC-V cores and the challenges of certification; ➁ The role of Breker Verification Systems in the certification process; ➂ The complexity of certifying RISC-V ISA implementations and the efforts of RISC-V International.
2nm3D IC3nmAIAI PCAI chipAMDASUSArmCPUChipletDRAMDellEDAEMIBEUVGDDRGPUGaNHBMHPCInfineonLinuxNPUNVIDIAPCIePrivacyRaspberry PiSEMICONDUCTORSK hynixSSDSwitchTIautomotivecoolingcybersecuritygamingiOSlaptopmemorymicrochipmonitorsoftware
12 months ago
➀ Hynix has started mass production of the world's first 321-layer NAND with 1Tb capacity; ➁ The 321-layer device offers a 12% improvement in write time and a 13% improvement in read time compared to the 238-layer device; ➂ Hynix has adopted the '3 plugs' process technology and a low-stress material for stacking more than 300 layers.
3D ICDRAMNANDmemory
12 months ago
➀ NVIDIA has announced a new Grace Blackwell platform with the NVIDIA GB200 NVL4, which combines two Arm-based Grace CPUs and four Blackwell GPUs. The platform is designed for lower power deployments with a power consumption of just over 6kW. The NVL4 module is targeted to be a large node with up to 1.3TB of combined coherent memory. ➁ The GB200 NVL4 is set to ship in the second half of 2025. ➂ The NVL4 is designed as an alternative to the higher power and higher GPU count platforms offered by NVIDIA, targeting specific deployment needs.
AIAI PCArmChipletDRAMEDAEMIBEUVGPUHBMHPCNPUNVIDIASSDcpu
12 months ago
➀ Hynix plans to start sampling HBM3e 16hi memory with 48 GB capacity per cube in H1 2025; ➁ HBM3e 16hi offers a high-capacity alternative before the production of HBM4 16hi; ➂ HBM3e 16hi can deliver a maximum capacity of 384 GB per system, surpassing NVIDIA’s Rubin at 288 GB; ➃ Transitioning from HBM3e to HBM4 will double the I/O count and increase die size, but the per-die capacity remains at 24 GB; ➄ HBM3e 16hi will adopt the Advanced MR-MUF stacking process for higher stack counts and computational bandwidth.
HynixChipletDRAMHBMMicrochipTSMC
12 months ago

➀ TechInsights has obtained and analyzed Samsung Electronics' D1b DRAM, revealing its cell size and bit density.

➁ Samsung's D1b DRAM has a cell size significantly smaller than SK Hynix and Micron's D1b versions, with a wordline and bitline pitch of 32.6nm and 37.6nm respectively.

➂ The cell design rule or feature size for the 7.8F^2 DRAM cell is 12.54nm, indicating that Samsung's D1b DRAM is in the 12nm mid-range class.

DRAMSamsung Electronicstechnology