➀ Imec developed a GaN MOSHEMT on silicon with record 27.8dBm output power and 66% efficiency at 13GHz/5V, optimized for 6G FR3 band (7-24GHz);
➁ Achieved ultra-low 0.024Ω·mm contact resistance using regrown n⁺(In)GaN, potentially boosting output power density by 70%;
➂ Addresses limitations of current GaAs and SiC-based solutions, enabling scalable silicon platforms for future 6G mobile devices.
➀ Imec fabricated Ruthenium (Ru) interconnects at a 16nm pitch using a semi-damascene process, achieving record-low resistance of 656Ω/µm;
➁ The integration flow combined EUV-based SADP and optimized Ru etching to enhance cost-effectiveness and yield, with 90%+ yields at 18-22nm pitches;
➂ Imec is advancing pillar-based self-aligned vias and epitaxial Ru films to further reduce resistance and expand multi-layer interconnect scalability.
➀ Imec and MIT collaborate on nanoelectronics-based solutions for minimally invasive diagnostic devices to advance personalized medicine;
➁ The partnership combines MIT's expertise in healthcare microsystems and imec's semiconductor technology leadership, aiming to develop clinical and home-use monitoring devices;
➂ AI-integrated data from these devices will generate digital biological profiles to empower disease diagnosis, therapy, and prevention.
➀ Siemens Digital acquires Excellicon to strengthen EDA automation with timing and verification tools;
➁ IMEC proposes reconfigurable AI ICs for future applications;
➂ Analog Devices launches the ADHV4710 power op-amp with ±52V/100mA output and digital interface capabilities, while Zeno Power secures $50M for nuclear battery development in extreme environments.
➀ Imec has developed an ingestible sensor (2.1cm long, 0.75cm diameter) to measure redox balance, pH, and temperature in the gastrointestinal tract, addressing challenges in traditional diagnostic methods like endoscopy;
➁ The sensor, demonstrated live at ITF World, offers real-time monitoring without invasive procedures and has been tested in healthy volunteers with Wageningen University & Research;
➂ Future trials with Radboud University Medical Center will focus on patients with cancer or chronic inflammation, aiming to advance gastrointestinal disease diagnosis and management.
➀ Imec and TNO have launched the Holst Centre Photonics Lab in the Netherlands, partially funded by PhotonDelta, to accelerate photonics R&D.
➁ The lab combines imec's expertise in tape-out validation, on-chip lasers, and system testing with TNO's strengths in free-space optics and photonic integration, fostering industry-academia collaboration.
➂ Focused on applications like LiDAR, medical diagnostics, and quantum technologies, the initiative aims to strengthen the Netherlands' leadership in integrated photonics across automotive, healthcare, and data communication sectors.
➀ Imec has developed a proof-of-concept photonics-enabled CDM FMCW radar system that ensures coherent chirps to remote radar units.
➁ This technology could revolutionize next-generation driver assistance solutions and other high-precision sensing applications.
➂ The system utilizes a phase encoder with code-division multiplexing and optical signal distribution for low-loss transmission.
➀ imec, a leading nanoelectronics and digital technologies research center, is establishing an Advanced Chip Design Accelerator (ACDA) in Baden-Württemberg, Germany.
➁ The €40 million center is funded over the next five years.
➂ The focus is on advancing automotive chiplet technology, enhancing Germany and Europe's position in this field.
➀ Imec and Zeiss have signed a Strategic Partnership Agreement to advance semiconductor technology.
➁ The partnership focuses on High-NA-EUV lithography and other key semiconductor manufacturing technologies.
➂ Zeiss will support imec with research projects and lithography optics, enhancing imec's pilot line capabilities.
➀ ASML and imec have signed a new strategic partnership agreement, focusing on research and sustainability.
➁ The agreement aims to deliver valuable solutions in two areas: advancing the semiconductor industry and developing sustainable innovation initiatives.
➂ The collaboration includes ASML's full product portfolio, focusing on high-end nodes and advanced technologies.
➀ Intel has begun production with the first two of ASML's advanced lithography machines in its factory, showing early data indicating increased reliability over earlier models.
➁ Intel, which became the first chip manufacturer to receive these machines last year, plans to use them to develop 18A manufacturing technology for mass production later this year.
➂ Imec has demonstrated the first electrical yield results from 20nm spacing metal lines patterned using High NA EUV single patterning technology, showing good electrical yield and fewer random defects.
➀ SRAM has been used in high-performance computing architectures as embedded cache for decades, but its bit density expansion has slowed down and is affected by standby power issues.
➁ Spin Orbit Torque (SOT) MRAM offers advantages like low standby power, GHz-level switching speed, negligible leakage, almost infinite endurance, high reliability, and scalability, making it a promising alternative to SRAM.
➂ SOT-MRAM uses magnetic tunnel junctions (MTJ) as its basic building block, where the magnetic orientation can be vertical or in-plane, affecting the read and write operations.
➃ Recent advancements in SOT-MRAM technology, including improvements by imec, have demonstrated high switching speeds and durability, addressing key challenges in cache applications.
➄ Imec has developed innovative solutions for field-free switching, low dynamic power consumption, and scaling SOT-MRAM devices to the limit, making it a milestone for high-density SRAM applications.
➅ Further optimization of performance and reliability parameters, such as retention rate and write error rate, is being explored to bring SOT-MRAM closer to real-world specifications.
➆ Imec has also presented a novel composite free layer for MTJ, which improves the reliability of SOT-MRAM devices and reduces sensitivity to external magnetic disturbances.
➀ SRAM has been used in high-performance computing architectures as embedded cache for decades, but its bit density expansion has slowed down and is affected by standby power issues.
➁ Spin Orbit Torque (SOT) MRAM offers advantages like low standby power, GHz-level switching speed, negligible leakage, almost infinite endurance, high reliability, and scalability, making it a promising alternative to SRAM.
➂ SOT-MRAM uses magnetic tunnel junctions (MTJ) as its basic building block, where the magnetic orientation can be vertical or in-plane, affecting the read and write operations.
➃ Recent advancements in SOT-MRAM technology, including improvements by imec, have demonstrated high switching speeds and durability, addressing key challenges in cache applications.
➄ Imec has developed innovative solutions for field-free switching, low dynamic power consumption, and scaling SOT-MRAM devices to the limit, making it a milestone for high-density SRAM applications.
➅ Further optimization of performance and reliability parameters, such as retention rate and write error rate, is being explored to bring SOT-MRAM closer to real-world specifications.
➆ Imec has also presented a novel composite free layer for MTJ, which improves the reliability of SOT-MRAM devices and reduces sensitivity to external magnetic disturbances.
➀ Intel, TSMC, and Samsung are advancing their processes to 1.8nm (18A) and 1.6nm (16A) with full-gate transistors (Intel calls them RibbonFET) and further to the 14A node.
➁ Imec is researching the next-generation complementary field-effect transistor (CFET) stacked transistors on the process roadmap.
➂ Imec will showcase its CFET standard cell at the 2024 IEEE International Electronic Devices Meeting (IEDM) this week, which includes two rows of CFET with a shared signal wiring wall, reducing the area of logic and SRAM units significantly.
➃ Intel has made breakthroughs in 2D transistor technology using beyond-silicon materials, chip interconnects, and packaging technologies.
➄ Intel's RibbonFET is the company's first new transistor design since the introduction of FinFET 13 years ago and is the company's first full-gate (GAA) transistor.
