<p>➀ Intel, TSMC, and Samsung are advancing their processes to 1.8nm (18A) and 1.6nm (16A) with full-gate transistors (Intel calls them RibbonFET) and further to the 14A node.</p><p>➁ Imec is researching the next-generation complementary field-effect transistor (CFET) stacked transistors on the process roadmap.</p><p>➂ Imec will showcase its CFET standard cell at the 2024 IEEE International Electronic Devices Meeting (IEDM) this week, which includes two rows of CFET with a shared signal wiring wall, reducing the area of logic and SRAM units significantly.</p><p>➃ Intel has made breakthroughs in 2D transistor technology using beyond-silicon materials, chip interconnects, and packaging technologies.</p><p>➄ Intel's RibbonFET is the company's first new transistor design since the introduction of FinFET 13 years ago and is the company's first full-gate (GAA) transistor.</p>