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August 19
- Swiss Study Shows Photons Aren't the Problem for Hyper-NA EUV➀ Researchers at the Paul Scherrer Institute (PSI) have achieved 5 nm half-pitch line/space patterns using 13.5 nm EUV light, surpassing the theoretical maximum resolution of ASML’s high-NA EUV tool. ➁ The technique used, EUV interference lithography (EUV-IL), involves making two EUV beams interfere to create periodic images, previously achieving patterns down to 6 nm half-pitch. ➂ The study concludes that photons are not the limiting factor for resolution at this scale, shifting focus to developing new photoresist materials and optimizing existing platforms.
August 16
- Imec Demonstrates High-NA EUV Patterning Capabilities➀ Imec has released images of single-exposure patterns using ASML’s high-NA EUV scanner, showcasing logic structures down to a 9.5nm half-pitch. ➁ The patterns include 30nm center-to-center random vias and a DRAM-relevant pattern at P22nm pitch, demonstrating the readiness of the ecosystem for high-resolution EUV lithography. ➂ These patterns were created at the ASML-Imec High NA EUV Lithography Lab in Veldhoven, highlighting the potential of High NA EUV for single-print imaging of aggressively-scaled 2D features.
- Superior Efficiency: Japanese Four-Mirror EUV Setup Unlikely to Make Waves➀ Japanese engineer Tsumoru Shintake has developed a four-mirror EUV system that is over ten times more efficient than current ASML scanners. ➁ The design reduces the number of mirrors from ten to four, cutting EUV light generation power by 92% and lowering manufacturing and maintenance costs. ➂ Despite its efficiency, the setup is unlikely to be commercially adopted due to reduced resolution and smaller field size, according to ASML and Zeiss.