➀ A new 3D imaging technique reveals key details of the magnetic skyrmion, a nanoscale object with potential for new microelectronic devices with high data storage capacity and low power consumption. ➁ Researchers at Lawrence Berkeley National Laboratory have created 3D X-ray images to characterize the spin orientations within skyrmions, which could lead to more efficient quantum computing and data storage devices. ➂ The study demonstrates the importance of understanding the 3D spin texture of skyrmions for the development of advanced spintronic devices.
Recent #DRAM news in the semiconductor industry
➀ TrendForce predicts a 25% year-on-year increase in DRAM bit output for 2025.➁ Excluding HBM and Chinese capacity, the output would rise by only 15%.➂ HBM3e supply is expected to remain tight.
➀ SK Hynix is scheduled to provide samples of its Gen 5 HBM, HBM3E 16H, in early 2025; ➁ The HBM3E 16H features 16 stacked DRAM dies and will utilize mass reflow molding technology; ➂ SK Hynix CEO Kwak Noh-jung announced this at an event hosted by SK Group.
➀ Researchers from Queen Mary University of London have developed new nanocomposite films from starch, offering a sustainable alternative to petroleum-based materials; ➁ The films are made from abundant natural polymer starch and highly conductive MXene, with potential applications in electronics and sensing; ➂ The nanocomposites can be tailored for various uses, including wearable technology and healthcare, and are biodegradable.
➀ The story is about an ambitious startup that entered the DRAM, SRAM, E2PROM, and microprocessor markets; ➁ The company built two fabs and produced successful memories and a unique microprocessor that was not adopted by major applications; ➂ Despite spawning many startups that adopted its approach, the company could not survive independently and was taken over. The moral is that uniqueness can be a negative.
➀ The UK has developed the world's first computer-controlled gas cutting machine, marking a significant step towards automation in shipyards; ➁ The machine, built by British Oxygen-Ferranti, can reduce steel plate cutting time by at least 50% compared to conventional methods; ➂ The technology is applicable to structural engineering, locomotive building, and atomic reactor construction.
➀ SK hynix posts record-high Q3 2024 profit; ➁ Sales of AI memory, HBM, and eSSDs see 'explosive' demand; ➂ SK hynix solidifies its position as the world's No.1 AI memory technology provider.
➀ Google is rumored to switch to TSMC's N3E process for Tensor G5; ➁ The report also clarifies that Google has chosen not to use 2nm technology for Tensor G6; ➂ The move could impact the competition in the AI and smartphone chip markets.
➀ Korea’s September semiconductor exports reached a record high of $13.63 billion, up 36.3% year-on-year. Memory exports grew 60.7% year-on-year and 20% month-on-month to $8.72 billion. SoC exports rose 5.2% year-on-year to $4.37 billion. ➁ The overall Information and Communication Technology exports in September 2024 increased by 24% year-on-year to $22.36 billion. ➂ HBM had a significant impact on DRAM export values, and TrendForce forecasts that memory price growth will slow in Q4.
➀ Wolfspeed wins $750m Chips Act award; ➁ Vietnam semi plan; ➂ China to have 11% of global DRAM capacity this year; ➃ Kioxia’s route from $30bn to $5bn; ➄ Intel sets up second high-NA EUV machine
➀ Samsung has developed next-gen 24Gbps GDDR7 memory modules; ➁ Offering higher VRAM capacities on future consumer GPUs; ➂ Up to 42.5Gbps speeds.
➀ Arm is exploring the feasibility of running LLMs on mobile devices; ➁ Arm's optimization techniques for LLMs on mobile; ➂ The importance of practical use cases for LLMs in mobile devices
➀ China's DRAM manufacturer Changxin Memory Technologies is expected to have 11% of the global DRAM capacity this year; ➁ Changxin's capacity has increased from 120k wpm at the end of 2023 to 160k wpm in Q1 2024, aiming for 200k wpm by the end of the year; ➂ This rapid expansion could lead to oversupply and a decrease in ASPs for older DRAM types.
➀ The research on hybrid memory combines the density of DRAM with the speed of SRAM, receiving funding from CHIPS and the Science Act. The hybrid gain cell (HGC) memory research is one of the projects of the California-Pacific-Northwest AI Hardware Center, which will receive $16.3 million in funding from the U.S. Department of Defense.
➁ The team at Stanford University is developing an alternative memory design that combines the advantages of SRAM and DRAM. DRAM can store a large amount of data in a relatively small space, but its read speed is relatively slow. SRAM can read data faster, but its units are relatively large. The gain cell memory developed by the Stanford team combines the small space of DRAM and the almost as fast speed of SRAM.
➂ The mixed gain cell storage device overcomes limitations by combining silicon read transistors with indium tin oxide write transistors, achieving a bit retention time of over 5000 seconds and about 50 times faster than similar oxide-oxide gain cells.
➀ SK Hynix has placed a significant order for thermal compression bonders from ASMPT; ➁ The equipment is for the production of HBM3E 12H, SK Hynix's newest high-bandwidth memory; ➂ The order includes over 30 units of the equipment.
➀ HBM is expected to take 10% of the DRAM units but 30% of the revenues due to its higher ASP; ➁ Sourcengine reports that HBM supply is booked out to the end of 2025, with conflicting views on a potential shortage or oversupply next year; ➂ Regular DRAM ASPs are low and may not improve until H2 2025.
➀ Contract prices of DRAM and NAND dropped by over 10% in September; ➁ The decline was due to low demand for PCs and consumer electronics; ➂ DDR4 8Gb 1Gx8 prices fell by 17.07% to US$1.7.
Hynix has started mass production of a 36GB 12-layer HBM3E memory, marking the largest capacity HBM to date. The company achieved this by stacking 12 layers of 3GB DRAM chips, making each chip 40% thinner than before and using TSV4 technology. The new product offers improved heat dissipation performance and stability compared to the previous generation, and is designed to excel in speed, capacity, and stability, crucial for AI memory.
➀ SK hynix has begun mass production of its 36GB HBM3E with 12 high dies; ➁ The new HBM3E is designed for next-generation high-performance computing and gaming applications; ➂ This marks a significant advancement in memory technology.
➀ A new research project led by Professor Matthias Jung aims to address the bottleneck caused by memory in computer applications, particularly in AI. ➁ The project involves developing the DRAMSys simulation tool to make it ready for the latest DRAM semiconductor memory standards like HBM4, DDR6, and CXL. ➂ The tool will help developers simulate new applications early in the development stage, identifying potential bottlenecks and optimizing memory usage.