➀ HBM addresses bandwidth limitations in traditional 2D packaging by using stacked memory chips and TSV technology. ➁ Key technologies in HBM include advanced packaging, microbump interconnects, and TSV. ➂ HBM offers higher bandwidth and lower power consumption compared to GDDR, making it suitable for high-performance computing and graphics processing.

➀ Samsung has initiated mass production of 12-nanometer-class LPDDR5X DRAM packages, which are thinner and offer better heat resistance, suitable for mobile, gaming, and AI devices. ➁ These new DRAM packages are designed to enhance space efficiency and thermal management, crucial for on-device AI applications. ➂ Samsung is also developing even thinner 24GB and 32GB modules to meet future demands for compact and high-performance memory solutions.

➀ SK hynix has secured up to $450 million in direct funding and access to $500 million in loans to build an advanced memory packaging facility in Indiana. ➁ The facility is expected to start operations in 2028, producing HBM4 or HBM4E memory. ➂ The project aims to strengthen the U.S. semiconductor industry and create up to 1,000 jobs.

1. JEDEC has announced plans for advanced memory modules including DDR5 Multiplexed Rank Dual Inline Memory Modules (MRDIMM) and a next-generation Compression-Attached Memory Module (CAMM) for LPDDR6 to support high-performance computing and AI applications. 2. The MRDIMM standard aims to double the bandwidth to 12.8 Gbps and increase the pin speed, supporting more than two ranks and ensuring compatibility with conventional RDIMM systems. 3. The next-generation CAMM module for LPDDR6 targets a maximum speed greater than 14.4 GT/s, offering a 24-bit subchannel, a 48-bit channel, and a connector array.

1. DRAM and NAND Flash revenues are projected to increase by 75% and 77% respectively in 2024, driven by higher bit demand and improved supply-demand balance. 2. High-value products like HBM, DDR5, and LPDDR5/5X are expected to boost DRAM ASPs significantly. 3. NAND Flash revenue growth is supported by the adoption of QLC SSDs in enterprise and smartphones, and restrained capital expenditures by manufacturers.

1. Q1 DRAM revenues increased by 5.1% despite a fall in units, driven by contract ASP increases. 2. The Big Three in DRAM saw seasonal shipment declines but benefited from price increases. 3. Mobile DRAM prices rose the most due to strong sales of Chinese smartphones, while consumer DRAM had the lowest price rises.

Robert Heath Dennard, a pioneer in electrical and computer engineering who invented DRAM, passed away on April 23, 2024. He will also be remembered for Dennard Scaling theory, based on Moore’s law.