Hynix has started mass production of a 36GB 12-layer HBM3E memory, marking the largest capacity HBM to date. The company achieved this by stacking 12 layers of 3GB DRAM chips, making each chip 40% thinner than before and using TSV4 technology. The new product offers improved heat dissipation performance and stability compared to the previous generation, and is designed to excel in speed, capacity, and stability, crucial for AI memory.