➀ The research on hybrid memory combines the density of DRAM with the speed of SRAM, receiving funding from CHIPS and the Science Act. The hybrid gain cell (HGC) memory research is one of the projects of the California-Pacific-Northwest AI Hardware Center, which will receive $16.3 million in funding from the U.S. Department of Defense. ➁ The team at Stanford University is developing an alternative memory design that combines the advantages of SRAM and DRAM. DRAM can store a large amount of data in a relatively small space, but its read speed is relatively slow. SRAM can read data faster, but its units are relatively large. The gain cell memory developed by the Stanford team combines the small space of DRAM and the almost as fast speed of SRAM. ➂ The mixed gain cell storage device overcomes limitations by combining silicon read transistors with indium tin oxide write transistors, achieving a bit retention time of over 5000 seconds and about 50 times faster than similar oxide-oxide gain cells.