Recent #Samsung Electronics news in the semiconductor industry

4 months ago

➀ Samsung Electronics is releasing a 1Tbit 3D NAND flash memory with storage cell layers up to 400+ layers, achieving a memory density of 28.2Gbit/mm2 using TLC method.

➁ Kioxia and Western Digital's joint development team is reporting a 1Tbit 3D NAND flash memory with 332 layers, with a memory density of up to 29Gbit/mm2.

➂ SK Hynix has developed a 2Tbit 3D NAND flash memory with 321 layers, using QLC method multi-value storage.

➃ Samsung is currently developing the 9th generation 3D NAND with 286 layers and is working on 400-layer technology.

➄ SK Hynix is exploring the potential of manufacturing 3D NAND at ultra-low temperatures, aiming to produce new generation products with over 400 layers by 2025.

➅ Kioxia plans to mass-produce 3D NAND storage devices with over 1,000 layers by 2031.

➆ The journey towards 1,000-layer 3D NAND involves multiple improvements in manufacturing processes, including vertical, horizontal, and logical aspects.

3D NANDKioxiaSK HynixSamsung Electronicsflash memorystorage technology
6 months ago

➀ Samsung Electronics announces a major restructuring of its senior management, maintaining a dual-CEO system.

➁ Deputy Chairman and Head of Equipment Solutions (DS) and Semiconductor Division Jeon Young-hyun will serve as co-CEOs alongside Han Jong-hee.

➂ The move aims to address the ongoing crisis in AI semiconductor business, particularly high-bandwidth memory (HBM), and enhance the company's competitive edge in the global market.

Samsung Electronics
7 months ago

➀ TechInsights has obtained and analyzed Samsung Electronics' D1b DRAM, revealing its cell size and bit density.

➁ Samsung's D1b DRAM has a cell size significantly smaller than SK Hynix and Micron's D1b versions, with a wordline and bitline pitch of 32.6nm and 37.6nm respectively.

➂ The cell design rule or feature size for the 7.8F^2 DRAM cell is 12.54nm, indicating that Samsung's D1b DRAM is in the 12nm mid-range class.

DRAMSamsung Electronicstechnology
7 months ago

➀ Samsung Electronics has implemented a large-scale voluntary resignation plan.

➁ The plan primarily targets CL3 (Vehicle & Section Chief level) employees who have worked for 15 years or more but have not faced hardship within the past 5 years.

➂ The second phase of the plan extends to employees with 10 years of service, and the third phase will expand to all staff if targets are not met. The final phase is a continuous operation.

➃ Voluntary resignation conditions include a severance pay of 380 million won and 4 months of salary, totaling around 400 million won.

Samsung ElectronicsVoluntary Resignation
7 months ago

➀ Samsung Electronics faces a crisis due to its organizational culture and lack of bold innovation;

➁ The company's focus on financial and legal aspects over technology has hindered its progress;

➂ Samsung's decision to withdraw from HBM (High Bandwidth Memory) was criticized for not being financially beneficial;

➃ The article highlights the challenges Samsung faces in packaging technology and its falling behind competitors like TSMC;

➅ The internal reporting process is lengthy and prone to distortion, affecting decision-making;

➆ Employees are leaving for better opportunities, especially in China;

➇ The article suggests that Samsung needs to revamp its management and focus on fostering a culture of innovation and open discussion.

HBMSamsung Electronicsinnovation
8 months ago
➀ Samsung Electronics' third-quarter performance is expected to miss the market's expectations, with revenue in the 80 trillion KRW range and operating profit between 10 to 11 trillion KRW; ➁ Despite strong demand for AI memory, the memory cycle is slowing down, and factors such as the weak sales of flagship smartphones in the second half of the year are analyzed; ➂ Analysts have continuously lowered their expectations for Samsung Electronics' performance, with IBK Securities and Shinhan Investment & Securities recently downgrading their forecasts.
Samsung Electronics
8 months ago
➀ Samsung Electronics is facing threats to its 32-year dominance in the DRAM market due to its delayed mass production of 5th-generation high-bandwidth memory HBM3E compared to competitors like SK Hynix and Micron; ➁ The challenge to reverse the situation is heightened without the introduction of next-generation HBM; ➂ The article highlights the competitive landscape and the impact of technological advancements on market leadership.
HBM3eSamsung Electronics
10 months ago
1. Samsung Electronics introduces three new mobile image sensors, ISOCELL HP9, GNJ, and JN5, aiming to enhance smartphone photography. 2. The ISOCELL HP9 features a 200MP sensor with advanced light-gathering technology, improving color reproduction and focus. 3. These sensors promise to set new benchmarks in mobile photography with enhanced low-light performance and zoom capabilities.
Image SensorsSamsung ElectronicsSmartphone Photography
11 months ago
1. Altair acquires Metrics Design Automation to enhance 3D-IC design capabilities. 2. JILA develops an atomic clock capable of detecting microscopic gravity effects. 3. The automotive semiconductor market is projected to grow significantly by 2027, with memory and microprocessor segments leading. 4. The global LiDAR market is expected to grow at a 38% CAGR from 2023 to 2029, driven by Chinese OEMs. 5. Samsung regains the No.1 spot in the global semiconductor market in Q1 2024, surpassing Intel.
AltairLidarSamsung Electronics