<p>➀ Samsung Electronics is releasing a 1Tbit 3D NAND flash memory with storage cell layers up to 400+ layers, achieving a memory density of 28.2Gbit/mm2 using TLC method.</p><p>➁ Kioxia and Western Digital's joint development team is reporting a 1Tbit 3D NAND flash memory with 332 layers, with a memory density of up to 29Gbit/mm2.</p><p>➂ SK Hynix has developed a 2Tbit 3D NAND flash memory with 321 layers, using QLC method multi-value storage.</p><p>➃ Samsung is currently developing the 9th generation 3D NAND with 286 layers and is working on 400-layer technology.</p>➄ SK Hynix is exploring the potential of manufacturing 3D NAND at ultra-low temperatures, aiming to produce new generation products with over 400 layers by 2025.</p><p>➅ Kioxia plans to mass-produce 3D NAND storage devices with over 1,000 layers by 2031.</p><p>➆ The journey towards 1,000-layer 3D NAND involves multiple improvements in manufacturing processes, including vertical, horizontal, and logical aspects.</p>