➀ An introduction to semiconductors and their conductivity properties; ➁ Explanation of the concept of doping and its effect on semiconductor conductivity; ➂ Overview of BCD, CMOS, FinFET, SOI, GaN, and SiC technologies and their applications.

➀ The reference design features a two-channel string inverter with full bidirectional power; ➁ It combines PV inputs and battery storage, supporting up to 10kW output; ➂ Texas Instruments demonstrates the implementation of this inverter, which uses GaN FETs for high switching frequencies and improved form factor.

➀ Scientists from Cornell University and the Polish Academy of Sciences have developed a method to create gallium nitride-based LEDs and power transistors on the same IC by utilizing both sides of the wafer and exploiting the unique properties of GaN. ➁ The researchers overcame challenges in transistor fabrication to ensure the devices remain functional. ➂ The technology has potential applications in micro-LED displays and could lead to the convergence of photonic, electronic, and acoustic devices.

➀ The Mecpow X4 Pro offers a powerful 22-watt diode laser for engraving and cutting; ➁ It comes with an array of safety features and an integrated webcam; ➂ The device lacks an integrated display and has issues with the acrylic enclosure and software experience.

➀ Tesla's BEV market share dropped from 19% to 17% in the first five months of 2024; ➁ BYD is just one point behind Tesla at 16%; ➂ The BEV portfolio of legacy automakers like Volkswagen and Geely-Volvo stood at 7 and 8 percent, respectively.

➀ GaN is poised to become a crucial technology for power and RF applications in the near future; ➁ Established Si and SiC companies are eager to enter the emerging GaN market; ➂ The transition from innovation to mass production for GaN presents significant challenges.

➀ Infineon has developed 300mm GaN wafers that offer 2.3 times more ICs per wafer than 200mm; ➁ The technology breakthrough is expected to be a game-changer for the industry, enabling the full potential of gallium nitride; ➂ Infineon's 300mm GaN production will position the company to shape the growing GaN market.

➀ Infineon has developed the world's first 300mm GaN wafer technology; ➁ This technology is a game-changer for the industry; ➂ Infineon is the first to master this groundbreaking technology.

➀ QPT, a Cambridge GaN power drive startup, has appointed Simon Hart, an electric motor and business specialist, as an advisor to its board. Hart has extensive experience in scaling up businesses and has a background in electric motors and automotive power management. He believes that GaN has the potential to revolutionize power electronics, and QPT's technology addresses issues like thermal management and RF interference. ➁ QPT was founded in Cambridge in 2019, focusing on GaN power drive solutions. ➂ Hart's role as an advisor is to help QPT bring GaN technology to the global market.

➀ Key players like Infineon, Renesas, and GlobalFoundries are acquiring GaN technology companies to bolster their GaN capabilities. ➁ GaN, a third-generation semiconductor, boasts higher breakdown strength, faster switching speeds, and superior thermal conductivity, ideal for high-power applications. ➂ The GaN market is poised for significant growth, driven by its superior performance in sectors such as electric vehicles, AI, and robotics over traditional silicon devices.

➀ Richardson RFPD, an Arrow Electronics company, has introduced a series of Ka-band, GaN-on-SiC MMIC power amplifiers from United Monolithic Semiconductors. ➁ These devices, available in die and plastic QFN packaging, support Ka-band SATCOM uplink and 5G FR2 bands. ➂ The amplifiers feature high power, high PAE, and high linearity, optimized for transmitting modulated waveforms up to 42 GHz.

➀ Pulsiv, a Cambridge power electronics specialist, has developed an industry's most efficient 65W USB-C GaN reference design to address thermal performance challenges in power supplies. ➁ The design, PSV-RDAD-65USB, combines Pulsiv OSMIUM technology with an industry standard QR flyback and highly optimised, ultra-compact magnetics. ➂ It aims to drastically lower operating temperatures, minimise losses, and reduce size, creating a sustainable platform for the USB-C standard.

➀ The design introduces a 1.6kW bidirectional micro inverter using GaN technology, enhancing power density and efficiency. ➁ It features four channels compatible with PV panels or 48V BESS, and operates with a high-switching frequency. ➂ The design offers flexibility in energy management and aims to minimize system costs, making it ideal for residential solar systems.

1. Infineon Technologies is integrating GaN power transistors with gate driver chips in single packages. 2. The IGI70NxxxA2xS range combines a single GaN transistor with a single-channel driver in 5 x 6mm or 6 x 8mm packages. 3. Applications include longer-range e-bikes, portable power tools, and lighter-weight household appliances.

1. Globalfoundries acquires Tagore Technology's Power GaN IP portfolio; 2. Tagore had $1.4 million in revenue in 2023 with 29 employees; 3. The acquisition enhances GF's power IP portfolio and provides access to leading GaN technology.

1. EPC showcased its GaN-based power-conversion solutions at PCIM Europe. 2. The solutions are designed for high efficiency and reliability. 3. Applications include automotive and robotics sectors.

1. Renesas Electronics has completed the acquisition of Transphorm, a GaN transistor manufacturer. 2. The acquisition allows Renesas to immediately start offering GaN-based power products and reference designs. 3. This move is part of Renesas' strategy to invest in the power business, following other initiatives such as opening its Kofu Factory for power products and a silicon carbide device production line at its Takasaki Factory.

1. Texas Instruments introduced the DRV7308, a 250W smart GaN motor driver in a compact 12x12mm package. 2. The module features a 450V intelligent power module with a GaN three-phase bridge and can handle up to 5A pulses. 3. It offers over 99% efficiency when used with field-oriented control at 20kHz and does not require a heatsink in many applications.