Recent #driver news in the semiconductor industry

4 months ago

➀ Rutronik 分销的 GaN HEMT 单通道门驱动器 BM6GD11BFJ-LB 由 Rohm 生产,具有高达 2,500Vrms 的隔离电压和 60ns 的最小输入输出延迟;

➁ 驱动器在 -40 到 +125°C 的温度范围内工作,输入侧需要 5V 电源,消耗在 250μA 到 6mA 之间;

➂ 输入逻辑阈值分别为高电平 2.0V 和低电平 0.8V,并提供输入电阻以设置输出侧 GaN 晶体管的关闭状态。

GaNdriver
7 months ago
➀ Nexperia introduces a 110V 4A half-bridge gate driver IC designed for use in consumer devices, servers, telecommunications equipment, and micro-inverters. ➁ The NGD4300 offers a peak sourcing current of 4A and can sink 5A, with a delay as low as 13ns. ➂ It supports operation across a wide ambient temperature range and has built-in features for compatibility with CMOS and TTL.
DC-DC ConverterICNexperiaautomotive electronicsdriverpower electronics
7 months ago
➀ Vishay has expanded the SO-6 package to support 1kV operation for opto-based MOSFET and IGBT gate drivers. The package dimensions are 7mm from end to end with a creepage distance of 8mm.➁ The peak working voltage is 1.14kV for the widely-splayed part and 891Vpeak for the less-splayed versions.➂ The isolated drivers feature an AlGaAs LED on the input, a photo-diode, and an amplifier output, with secondary side power required at 15 to 30V (3mA max).
IGBTMOSFETVishaydriver