➀ SemiQ is developing 1,200V SiC MOSFETs for solar inverters with avalanche testing up to 800mJ, co-packaged with silicon carbide Schottky diodes.
➁ Four devices are introduced with channel on-resistance ranging from 8.4mΩ to 16.5mΩ.
➂ Additional devices with 330mJ avalanche testing and 39mΩ on-resistance are also mentioned, with some offering ultra-fast switching capabilities.
➀ Littelfuse has introduced a 200V half-bridge MOSFET and IGBT driver with integrated cross-conduction protection logic.
➁ The IXD2012NTR is designed to drive n-channel MOSFET gates requiring 10 to 20V and can supply a minimum of 1.4A pull-up and 1.8A pull-down.
➂ The device is optimized for high-frequency power applications and offers a supply range of 10 to 20V with a high-side bootstrap circuit capable of handling up to 224V.
➀ SemiQ Inc.推出了一款新的1200V SiC MOSFET六合一模块，专为电动汽车充电、能源存储、电机驱动和可再生能源平台等高需求应用设计；
➁ 模块集成了坚固的平面技术SiC MOSFET，具备低开关损耗、高功率密度及简化系统集成的特点；
➂ 产品支持连续漏极电流最高达30A，脉冲漏极电流可达70A，尺寸紧凑且可靠性高。
SemiQ has launched three 1.2kV three-phase silicon carbide MOSFET bridge modules in 62.8 x 33.8 x 15mm press-fit six-pack format.
The modules, with power ratings of 20mΩ 263W, 40mΩ 160W, and 80mΩ 103W, are designed for electric vehicle charging, energy storage, and motor drives.
Each module is tested to over 1,350V with 100% wafer-level burn-in.
➀ Rohm has developed three n-channel power mosfets in 5 x 6mm DFN packaging.
➁ The RS7E200BG is optimized for secondary-side ac-dc conversion and hot-swap controllers in 12V enterprise server power supplies.
➂ The DFN5060-8S package increases the internal die size area by approximately 65% compared to the conventional 5 x 6mm HSOP8 package.
➀ Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.
➁ The device is rated to handle 68A at 25°C and 48A at 100°C, as well as 160A pulses.
➂ The package combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.
➀ Advanced Linear Devices Inc. (ALD) has launched a dual MOSFET in its Supercapacitor Auto-Balancing (SAB) MOSFET family, enabling auto-balancing and power management for supercapacitors operating between 2.8V and 3.3V.
➁ The ALD910030 consumes minimal power for cell balancing and helps prevent failures in supercapacitors, which are increasingly being used in utility boxes, backup power systems, and industrial applications.
➂ The dual MOSFET monitors and controls voltage and leakage current for each supercapacitor in a series-connected stack, preventing power fluctuations and ensuring stable operation across temperatures ranging from -40°C to +85°C.
➀ Infineon推出适用于低地球轨道太空应用的辐射耐受型p沟道塑料封装功率MOSFET；
➁ 该MOSFET为60V型号，与四种适用于60V或150V使用的n沟道太空设备一同推出；
➂ 该p沟道MOSFET型号为BUP06CP038F-01，采用DPAK（TO252）封装，额定连续电流为35A，单事件效应（SEE）为46MeV∙cm2/mg，总电离剂量（TID）为30至50krad（Si）。
➀ The article discusses the potential of diamond semiconductors to revolutionize power electronics due to their unmatched thermal conductivity and wide bandgap.
➁ Researchers at Saga University have developed the first diamond n-channel MOSFET, demonstrating high field-effect mobility and stability at high temperatures.
➂ Companies like Adamant Namiki Precision Jewel Co, Ltd, Saga University, Element Six, and Cree are leading the way in diamond semiconductor research and commercialization.
