<p>➀ The article discusses the potential of diamond semiconductors to revolutionize power electronics due to their unmatched thermal conductivity and wide bandgap.</p><p>➁ Researchers at Saga University have developed the first diamond n-channel MOSFET, demonstrating high field-effect mobility and stability at high temperatures.</p><p>➂ Companies like Adamant Namiki Precision Jewel Co, Ltd, Saga University, Element Six, and Cree are leading the way in diamond semiconductor research and commercialization.</p>
Related Articles
- GaN picked for Mazda automotive power project5 months ago
- Next-Generation Tester For High-Power Chips6 months ago
- SiC MOSFET Six-Pack Modules5 months ago
- World’s First GaN Transistor With Integrated Schottky Diode5 months ago
- IQE and X-Fab hook up for GaN5 months ago
- Thin Chips and Robust Substrates – Key Technologies for Cost-Effective Silicon Carbide Power Electronics6 months ago
- In-Depth Analysis of Third-Generation Semiconductor Materials: Silicon Carbide and Gallium Nitride6 months ago
- Cambridge GaN Devices completes $32m Series C7 months ago
- Renesas develops new MOSFET process8 months ago
- TVS Diode For SiC MOSFET Protection8 months ago