➀ Rhopoint Components introduces the CMT-PLA3SB12340, a 1.2kV 260A three-phase SiC power module capable of delivering up to 340A at 25°C for electric vehicles;

➁ The module offers 5kV isolation, integrated gate driver power supplies, fault flags, and requires only 12V-18V input with PWM signals;

➂ Designed for automotive and industrial applications, it features compact dimensions (104 x 154 x 34mm), thermal management (0.183°C/W), and operates at -40°C to +175°C.

➀ Toshiba launched four 650V industrial SiC MOSFETs in compact 8×8mm DFN packages, featuring lower switching losses (55% turn-on and 25% turn-off reduction) compared to prior generations；

➁ The flagship TW054V65C model offers 54mΩ typical on-resistance, improved gate-drive stability via a separate source contact, and operates at +18V/0V gate drive without negative voltage requirements；

➂ Targeted applications include industrial SMPS, EV chargers, UPS systems, and solar inverters, with enhanced temperature stability (Rds(on) varies only 54-58mΩ from 25°C to 150°C).

➀ Power Integrations unveiled five 800V automotive reference designs using 1,700V InnoSwitch3-AQ flyback converters, targeting traction inverter gate drivers, emergency power, and auxiliary systems;

➁ Designs feature planar/wound transformers and InSOP-28G packaging with 5.1mm creepage to eliminate conformal coating;

➂ InnoSwitch3-AQ integrates a 1.7kV SiC switch, supports 30-1,000V input, and delivers up to 120W with <15mW no-load consumption.

➀ SemiQ is developing 1,200V SiC MOSFETs for solar inverters with avalanche testing up to 800mJ, co-packaged with silicon carbide Schottky diodes.

➁ Four devices are introduced with channel on-resistance ranging from 8.4mΩ to 16.5mΩ.

➂ Additional devices with 330mJ avalanche testing and 39mΩ on-resistance are also mentioned, with some offering ultra-fast switching capabilities.

➀ SemiQ Inc.推出了一款新的1200V SiC MOSFET六合一模块，专为电动汽车充电、能源存储、电机驱动和可再生能源平台等高需求应用设计；

➁ 模块集成了坚固的平面技术SiC MOSFET，具备低开关损耗、高功率密度及简化系统集成的特点；

➂ 产品支持连续漏极电流最高达30A，脉冲漏极电流可达70A，尺寸紧凑且可靠性高。

Thermic Edge Ltd proudly introduces its new Atomic Layer Deposition (ALD) System, designed to accelerate the integration of 2D materials into next-generation semiconductor devices. The system combines single-chamber ALD and high-temperature annealing, reducing contamination risks and improving process efficiency. It supports wafer-scale processing up to 8 inches and ensures uniform deposition across large-area substrates. The system features a showerhead gas delivery system for uniform gas distribution, precise temperature control, and multi-gas compatibility for oxide, sulfide, and nitride processing.

➀ Onsemi推出首款基于1200V碳化硅（SiC）MOSFET的SPM 31智能电源模块（IPMs），提供更高的能效和功率密度，同时减小了体积。

➁ 这些模块适用于多种工业系统，如AI数据中心的EC风扇、热泵、HVAC系统、伺服电机、变频驱动器（VFD）以及工业泵和风扇，可显著降低能耗和成本。

➂ SPM 31 IPMs具有低损耗、内置低压保护、统一PCB设计支持不同电流选项等特点，有助于减少开发时间并提高整体系统安全性。

➀ Mazda and Rohm have signed a deal to develop GaN-based automotive power electronics.

➁ GaN can reduce power conversion losses and contribute to the miniaturisation of components through high-frequency operation.

➂ The collaboration aims to unveil a demonstration model within FY2025 and practical implementation for FY2027.

➀ MICROTEST has introduced the VIP ULTRA tester, the latest addition to its VIP Extended product line, designed specifically for testing Wide Band Gap (WBG) devices made from Silicon Carbide (SiC) and Gallium Nitride (GaN).

➁ The VIP ULTRA supports multiple configurations with voltage capabilities of 1.7kV or 4kV and current capacities up to 250A, offering high parallelism for testing high-power chips.

➂ This advanced tester is particularly effective for testing high-power chips at the silicon wafer level, ensuring functionality before chip dicing and integration, driven by increasing demands in automotive and industrial sectors.

➀ Nexperia has introduced industry-leading 1200 V silicon carbide (SiC) MOSFETs with top-side cooling, designed for high-power applications such as EV charging stations, BESS, and photovoltaic inverters.

➁ These MOSFETs feature enhanced thermal performance, low inductance, and improved power density due to the innovative X.PAK package that combines SMD and through-hole cooling benefits.

➂ The devices maintain stable performance across a wide temperature range (25°C to 175°C), offering better thermal management and reliability compared to conventional options.

➀ Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

➁ The device is rated to handle 68A at 25°C and 48A at 100°C, as well as 160A pulses.

➂ The package combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.

➀ Infineon has launched the CoolSiC Schottky diode 2000 V G5 product family, its first discrete SiC diode with a breakdown voltage of 2000V, packaged in TO-247-2.

➁ The product is suitable for applications with DC link voltages up to 1500 V DC, such as solar and EV chargers.

➂ The diode allows for higher power levels and reduced component count, simplifying the overall design.

➀ Infineon Technologies AG has launched the industry's first discrete 2000 V silicon carbide (SiC) Schottky diodes, known as the CoolSiC Schottky Diode 2000 V G5 family, in September 2024. These diodes are now available in the TO-247-2 package, enabling easier design transitions and reducing component count by up to 50%.

➁ The diodes offer several key features such as no reverse recovery current, no forward recovery, high surge current capability, temperature-independent switching behavior, low forward voltage drop, and consistent forward voltage characteristics. They are designed to work optimally with Infineon’s 2000 V CoolSiC MOSFETs.

➂ The new diodes are ideal for applications like solar inverters and electric vehicle chargers, supporting higher power levels and enhancing system performance through simplified designs and improved efficiency.

➀ The Changan-SIDA SiC project, a joint venture between Changan's Deep Blue Auto and SIDA Semiconductor, is set to begin production with an initial capacity of 1.8 units.

➁ The project is expected to reach full production in June, with a first-phase capacity of 500,000 units and a second-phase capacity of 1.8 million units.

➂ SIDA Semiconductor, founded in 2005, specializes in the design, research, production, and sales of IGBT and SiC power semiconductor chips and modules.

➀ An inauguration ceremony has been held for a $3.2 billion SiC fab in Chongqing, China, a joint venture between Sanan Optoelectronics and STMicroelectronics.

➁ Sanan holds a 51% stake, with ST holding 49%. The fab is expected to start volume production of 8” SiC ICs in Q4 2025 using ST's SiC process technology.

➂ When fully operational in 2028, the fab will have a capacity of 40k wpm. Sanan will also build an 8-inch SiC substrate facility to supply wafers to the JV under a long-term agreement.

➀ The article discusses the potential of diamond semiconductors to revolutionize power electronics due to their unmatched thermal conductivity and wide bandgap.

➁ Researchers at Saga University have developed the first diamond n-channel MOSFET, demonstrating high field-effect mobility and stability at high temperatures.

➂ Companies like Adamant Namiki Precision Jewel Co, Ltd, Saga University, Element Six, and Cree are leading the way in diamond semiconductor research and commercialization.

The article discusses the development of cost-effective silicon carbide (SiC) power electronics through research projects like ThinSiCPower. It highlights the advantages of SiC over traditional silicon, emphasizing the need for reducing costs and improving thermal-mechanical stability. The project focuses on creating thin SiC chips and cost-effective substrates without the need for sawing and grinding, aiming to accelerate the market penetration of efficient SiC power electronics.

➀ The development history of semiconductor materials, from the first generation to the third generation;

➁ The unique physical properties of silicon carbide (SiC) and gallium nitride (GaN), such as wide bandgap, high breakdown field, high electron mobility, and excellent thermal conductivity;

➂ The market landscape of SiC and GaN, including market size, key players, and application areas.

➀ Multiple SiC-related projects in China have made new progress, including the commencement and production of new projects.

➁ Fastest has accelerated the progress of its SiC electro-control project, aiming to produce 2.5 million sets of synchronizers and 100,000 sets of motor electro-control systems annually.

➂ Tianyi Semiconductor is conducting pilot studies on SiC crystal rod processes.

➃ The project for producing Moissanite and SiC materials in Gongcheng, Guilin, has commenced.

➄ Daye Carbon is set to produce ultra-fine and ultra-pure graphite powder and other products for semiconductor chips and SiC chips.

➅ YiYuan Semiconductor's SiC project is expected to be completed and put into production next year.

➀ Wolfspeed's second 8-inch SiC factory, the Chatham Materials Factory, is set to be completed and launched.

➁ The factory is expected to be fully taken over by Wolfspeed by March 2024 and will begin production in June 2024.

➂ The factory, covering 220 million square feet, is currently undergoing final construction work, and Wolfspeed is testing SiC ingot production.