➀ Engineered substrate technology is driving the semiconductor industry from traditional planar scaling to innovative materials and 3D integration.
➁ Companies like Soitec, Intel, and Samsung are leading the adoption of this technology.
➂ Foundries are increasingly recognizing the strategic importance of engineered substrates like Fully Depleted SOI (FD-SOI) for their benefits in cost and performance.
➀ Mazda and Rohm have signed a deal to develop GaN-based automotive power electronics.
➁ GaN can reduce power conversion losses and contribute to the miniaturisation of components through high-frequency operation.
➂ The collaboration aims to unveil a demonstration model within FY2025 and practical implementation for FY2027.
➀ MICROTEST has introduced the VIP ULTRA tester, the latest addition to its VIP Extended product line, designed specifically for testing Wide Band Gap (WBG) devices made from Silicon Carbide (SiC) and Gallium Nitride (GaN).
➁ The VIP ULTRA supports multiple configurations with voltage capabilities of 1.7kV or 4kV and current capacities up to 250A, offering high parallelism for testing high-power chips.
➂ This advanced tester is particularly effective for testing high-power chips at the silicon wafer level, ensuring functionality before chip dicing and integration, driven by increasing demands in automotive and industrial sectors.
➀ Nexperia has introduced industry-leading 1200 V silicon carbide (SiC) MOSFETs with top-side cooling, designed for high-power applications such as EV charging stations, BESS, and photovoltaic inverters.
➁ These MOSFETs feature enhanced thermal performance, low inductance, and improved power density due to the innovative X.PAK package that combines SMD and through-hole cooling benefits.
➂ The devices maintain stable performance across a wide temperature range (25°C to 175°C), offering better thermal management and reliability compared to conventional options.
➀ Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.
➁ The device is rated to handle 68A at 25°C and 48A at 100°C, as well as 160A pulses.
➂ The package combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.
➀ Infineon has launched the CoolSiC Schottky diode 2000 V G5 product family, its first discrete SiC diode with a breakdown voltage of 2000V, packaged in TO-247-2.
➁ The product is suitable for applications with DC link voltages up to 1500 V DC, such as solar and EV chargers.
➂ The diode allows for higher power levels and reduced component count, simplifying the overall design.
➀ Infineon Technologies AG has launched the industry's first discrete 2000 V silicon carbide (SiC) Schottky diodes, known as the CoolSiC Schottky Diode 2000 V G5 family, in September 2024. These diodes are now available in the TO-247-2 package, enabling easier design transitions and reducing component count by up to 50%.
➁ The diodes offer several key features such as no reverse recovery current, no forward recovery, high surge current capability, temperature-independent switching behavior, low forward voltage drop, and consistent forward voltage characteristics. They are designed to work optimally with Infineon’s 2000 V CoolSiC MOSFETs.
➂ The new diodes are ideal for applications like solar inverters and electric vehicle chargers, supporting higher power levels and enhancing system performance through simplified designs and improved efficiency.
➀ The Changan-SIDA SiC project, a joint venture between Changan's Deep Blue Auto and SIDA Semiconductor, is set to begin production with an initial capacity of 1.8 units.
➁ The project is expected to reach full production in June, with a first-phase capacity of 500,000 units and a second-phase capacity of 1.8 million units.
➂ SIDA Semiconductor, founded in 2005, specializes in the design, research, production, and sales of IGBT and SiC power semiconductor chips and modules.
➀ An inauguration ceremony has been held for a $3.2 billion SiC fab in Chongqing, China, a joint venture between Sanan Optoelectronics and STMicroelectronics.
➁ Sanan holds a 51% stake, with ST holding 49%. The fab is expected to start volume production of 8” SiC ICs in Q4 2025 using ST's SiC process technology.
➂ When fully operational in 2028, the fab will have a capacity of 40k wpm. Sanan will also build an 8-inch SiC substrate facility to supply wafers to the JV under a long-term agreement.
➀ The article discusses the potential of diamond semiconductors to revolutionize power electronics due to their unmatched thermal conductivity and wide bandgap.
➁ Researchers at Saga University have developed the first diamond n-channel MOSFET, demonstrating high field-effect mobility and stability at high temperatures.
➂ Companies like Adamant Namiki Precision Jewel Co, Ltd, Saga University, Element Six, and Cree are leading the way in diamond semiconductor research and commercialization.
The article discusses the development of cost-effective silicon carbide (SiC) power electronics through research projects like ThinSiCPower. It highlights the advantages of SiC over traditional silicon, emphasizing the need for reducing costs and improving thermal-mechanical stability. The project focuses on creating thin SiC chips and cost-effective substrates without the need for sawing and grinding, aiming to accelerate the market penetration of efficient SiC power electronics.
➀ The development history of semiconductor materials, from the first generation to the third generation;
➁ The unique physical properties of silicon carbide (SiC) and gallium nitride (GaN), such as wide bandgap, high breakdown field, high electron mobility, and excellent thermal conductivity;
➂ The market landscape of SiC and GaN, including market size, key players, and application areas.
➀ Multiple SiC-related projects in China have made new progress, including the commencement and production of new projects.
➁ Fastest has accelerated the progress of its SiC electro-control project, aiming to produce 2.5 million sets of synchronizers and 100,000 sets of motor electro-control systems annually.
➂ Tianyi Semiconductor is conducting pilot studies on SiC crystal rod processes.
➃ The project for producing Moissanite and SiC materials in Gongcheng, Guilin, has commenced.
➄ Daye Carbon is set to produce ultra-fine and ultra-pure graphite powder and other products for semiconductor chips and SiC chips.
➅ YiYuan Semiconductor's SiC project is expected to be completed and put into production next year.
➀ Wolfspeed's second 8-inch SiC factory, the Chatham Materials Factory, is set to be completed and launched.
➁ The factory is expected to be fully taken over by Wolfspeed by March 2024 and will begin production in June 2024.
➂ The factory, covering 220 million square feet, is currently undergoing final construction work, and Wolfspeed is testing SiC ingot production.
➀ Infineon expands its SiC collaboration in the automotive sector with Forvia Hella's next-generation 800V DC/DC charging solution.
➁ Mitsubishi Electric joins the EU's 'FLAGCHIP' project to develop new SiC power module technology for wind power generation systems.
➂ SiChuangzhi Technology's SiC modules enter commercial storage applications, improving efficiency.
➃ BMW and Porsche to release new SiC vehicles with significant energy savings and improved performance.
➄ Chinese Academy of Sciences' self-developed SiC devices pass aviation verification for space applications.
➅ Southern Grid and Fraunhofer iSE accelerate the development and application of SiC in power grid facilities.
➀ Xilinx Integration and Guangqi Aion have signed a strategic cooperation agreement to establish a joint laboratory for automotive semiconductor technology research and development.
➁ XiZhi Technology has achieved a delivery milestone of over 20,000 units of its 800V platform high-end electric drive SiC-DCM power modules.
➂ Jingchi Machinery has successfully passed customer verification for its 8-inch SiC resistive crystal growth furnace.
➀ SunPower Electric announced the production of the 2 millionth unit, marking a significant milestone in the electric vehicle control and power supply field;
➁ The newly produced hybrid dual-control HEM38 product is based on the mature TPAK parallel power module and is equipped with a SiC step-up module, achieving an efficiency of up to 99.9%;
➂ The SiC motor controller has been successfully integrated into Geely's new hybrid model, the Starship 7 EM-i;
➃ The Starship 7 EM-i is Geely's first plug-in hybrid electric vehicle (PHEV) based on the GEA new energy exclusive architecture;
➄ Several leading car manufacturers such as BYD, Toyota, Hongqi, Chery, and Kia have also introduced hybrid models with SiC-based DHT systems.
