➀ Nexperia launches 20A 1,200V SiC Schottky diodes with merged PiN structure, enhancing surge current capability (135A for 10ms at 25°C);

➀ Offers two packaging options: TO-247 through-hole and D2PAK surface-mount, with minor power rating differences (200W vs. 190W at 25°C);

➁ Targets industrial applications such as servers, telecom, and solar inverters, while Vishay recently released smaller 1-2A 1,200V SiC diodes in 2.6mm x 5.2mm packages.

➀ Vishay launched third-gen 650V/1200V SiC Schottky diodes in SlimSMA HV package (2.6x5.2mm) with 3.2mm creepage distance and reduced profile;

➁ Features merged PIN-Schottky technology for stable switching performance across temperatures (Q=7.2-13nC) and ultra-low 1.3-1.35V forward voltage;

➂ Designed for bootstrap/anti-parallel/PFC applications in DC-DC/AC-DC converters with 175℃ operation and positive temp coefficient for parallel use.