<p>➀ Infineon Technologies AG has launched the industry's first discrete 2000 V silicon carbide (SiC) Schottky diodes, known as the CoolSiC Schottky Diode 2000 V G5 family, in September 2024. These diodes are now available in the TO-247-2 package, enabling easier design transitions and reducing component count by up to 50%.</p><p>➁ The diodes offer several key features such as no reverse recovery current, no forward recovery, high surge current capability, temperature-independent switching behavior, low forward voltage drop, and consistent forward voltage characteristics. They are designed to work optimally with Infineon’s 2000 V CoolSiC MOSFETs.</p><p>➂ The new diodes are ideal for applications like solar inverters and electric vehicle chargers, supporting higher power levels and enhancing system performance through simplified designs and improved efficiency.</p>
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