<p>➀ Toshiba launched four 650V industrial SiC MOSFETs in compact 8×8mm DFN packages, featuring lower switching losses (55% turn-on and 25% turn-off reduction) compared to prior generations；</p><p>➁ The flagship TW054V65C model offers 54mΩ typical on-resistance, improved gate-drive stability via a separate source contact, and operates at +18V/0V gate drive without negative voltage requirements；</p><p>➂ Targeted applications include industrial SMPS, EV chargers, UPS systems, and solar inverters, with enhanced temperature stability (Rds(on) varies only 54-58mΩ from 25°C to 150°C).</p>