<p>➀ Rutronik 分销的 GaN HEMT 单通道门驱动器 BM6GD11BFJ-LB 由 Rohm 生产,具有高达 2,500Vrms 的隔离电压和 60ns 的最小输入输出延迟;</p><p>➁ 驱动器在 -40 到 +125°C 的温度范围内工作,输入侧需要 5V 电源,消耗在 250μA 到 6mA 之间;</p><p>➂ 输入逻辑阈值分别为高电平 2.0V 和低电平 0.8V,并提供输入电阻以设置输出侧 GaN 晶体管的关闭状态。</p>
Related Articles
- Driving a GaN half-bridge? You might want to know this9 months ago
 - 650V GaN transistors co-packaged with driversover 1 year ago
 - How Dimonds Help Chip Cool Faster?12 days ago
 - GaN half-bridge driver chip for 72Vdc and 110Vac22 days ago
 - GaN Device Design and Optimization with TCAD27 days ago
 - FBH showcases latest R&D results at Photonics Daysabout 1 month ago
 - Space Forge partners for space-grown semiconductor materialsabout 1 month ago
 - CEO Interview with Adam Khan of Diamond Quantaabout 2 months ago
 - Announcing the finalists for Elektra Awards 2025about 2 months ago
 - Semiconductor Technology for Broadband Satellite Communication Achieves Record Efficiencyabout 2 months ago