<p>➀ Rutronik 分销的 GaN HEMT 单通道门驱动器 BM6GD11BFJ-LB 由 Rohm 生产,具有高达 2,500Vrms 的隔离电压和 60ns 的最小输入输出延迟;</p><p>➁ 驱动器在 -40 到 +125°C 的温度范围内工作,输入侧需要 5V 电源,消耗在 250μA 到 6mA 之间;</p><p>➂ 输入逻辑阈值分别为高电平 2.0V 和低电平 0.8V,并提供输入电阻以设置输出侧 GaN 晶体管的关闭状态。</p>
Related Articles
- Driving a GaN half-bridge? You might want to know this7 months ago
- 650V GaN transistors co-packaged with driversabout 1 year ago
- ERC Starting Grant for Junior Professor Stefan Mönch – Towards Almost Lossless Electrical Energy Conversion3 days ago
- ERC Starting Grant for Junior Professor Stefan Mönch – Towards Nearly Lossless Electrical Energy Conversion3 days ago
- NVIDIA Extends Windows 10 Driver Support For Some GPUs, Puts Others Out To Pastureabout 1 month ago
- 650V GaN from Renesas in TOLT, TO-247 and TOLL2 months ago
- Mouser signs Ampleon2 months ago
- Mario Ragwitz Becomes New Spokesperson of Fraunhofer Excellence Cluster CINES2 months ago
- GaN Based Single Phase Cycloconverter Reference Design2 months ago
- GaN-on-SiC MMIC amplifier for 13.75 – 14.5 GHz Satcom band.2 months ago