➀ Raspberry Pi introduces the new AI HAT+ with two variants, 13 and 26 TOPS; ➁ The HAT+ is based on Hailo-8 neural network inference accelerators; ➂ The 26 TOPS variant is designed for larger networks and can run multiple networks simultaneously.
Recent #GaN news in the semiconductor industry
➀ Imec spin-off Brailsports is developing a platform for optimizing athlete training volumes and schedules based on data analysis; ➁ The platform uses AI models to estimate individual athlete fitness and fatigue, improving performance and reducing injury risk; ➂ The platform is currently operational at cycling team Lotto Dstny, with positive results.
➀ Japanese companies are ramping up mass production of GaN power semiconductor devices for electric vehicles to increase range, although high costs remain a barrier.
➁ GaN is competing with SiC for applications in electric vehicle power semiconductor devices.
➂ GaN has very low power loss, which could reduce the charging time for electric vehicles from 90 minutes to 5 minutes.
➃ Companies like Sumitomo Chemical and Mitsubishi Chemical are investing in large diameter substrates to lower production costs.
➄ Toyota Synchro Corporation is working on integrated development from seeds to substrates and devices.
➅ Shin-Etsu Chemical is developing 300mm substrates for horizontal devices and 200mm substrates for vertical devices.
➆ GaN devices have a market size of over $2.3 billion in 2030, expected to grow from $220 million in 2023.
➀ Arm is exploring the feasibility of running LLMs on mobile devices; ➁ Arm's optimization techniques for LLMs on mobile; ➂ The importance of practical use cases for LLMs in mobile devices
➀ Cambridge GaN Devices will demonstrate its ICeGaN products at the IEEE Energy Conversion Congress and Expo in Phoenix. The demos include a 3 kW PFC reference design, a QORVO motor drive evaluation kit, and a slim 100W adapter among others.➁ The company's ICeGaN products are monolithic GaN ICs with power HEMT and support circuitry.➂ The demo also features a comparison of ICeGaN versus discrete GaN circuits.
➀ Electron Beam Probing (EBP) has become a powerful method for security analyzing of sub-7nm ICs. ➁ It offers better spatial resolution than optical probing and is suitable for sub-7nm flip-chips and advanced 3D architectures. ➂ The research focuses on the importance of EBP in failure analysis and hardware assurance.
➀ The research investigates the effects of adding TiC nanoparticles to aluminum alloy 7075, aiming to enhance casting performance and improve fluidity and surface quality; ➁ TiC nanoparticles were introduced in two concentrations, and their impact on fluidity and microstructure was analyzed; ➂ The results showed a significant improvement in fluidity and surface quality, with finer grain sizes and smoother surfaces.
➀ Nexperia announced a $200 million investment in Germany to develop next-generation wide bandgap semiconductors; ➁ SiC and GaN semiconductors are driving the next generation of electronic devices due to their high performance; ➂ The demand for SiC is growing exponentially with the global promotion of new energy vehicles; ➃ Nexperia is focusing on SiC MOSFETs for the transition from 400V to 800V battery systems in electric vehicles; ➄ Nexperia offers a comprehensive range of GaN devices for industrial and renewable energy applications; ➅ Nexperia is investing in 8-inch wafer production to capture market opportunities.
➀ An introduction to semiconductors and their conductivity properties; ➁ Explanation of the concept of doping and its effect on semiconductor conductivity; ➂ Overview of BCD, CMOS, FinFET, SOI, GaN, and SiC technologies and their applications.
➀ The reference design features a two-channel string inverter with full bidirectional power; ➁ It combines PV inputs and battery storage, supporting up to 10kW output; ➂ Texas Instruments demonstrates the implementation of this inverter, which uses GaN FETs for high switching frequencies and improved form factor.
➀ Scientists from Cornell University and the Polish Academy of Sciences have developed a method to create gallium nitride-based LEDs and power transistors on the same IC by utilizing both sides of the wafer and exploiting the unique properties of GaN. ➁ The researchers overcame challenges in transistor fabrication to ensure the devices remain functional. ➂ The technology has potential applications in micro-LED displays and could lead to the convergence of photonic, electronic, and acoustic devices.
➀ The Mecpow X4 Pro offers a powerful 22-watt diode laser for engraving and cutting; ➁ It comes with an array of safety features and an integrated webcam; ➂ The device lacks an integrated display and has issues with the acrylic enclosure and software experience.
➀ Tesla's BEV market share dropped from 19% to 17% in the first five months of 2024; ➁ BYD is just one point behind Tesla at 16%; ➂ The BEV portfolio of legacy automakers like Volkswagen and Geely-Volvo stood at 7 and 8 percent, respectively.
➀ GaN is poised to become a crucial technology for power and RF applications in the near future; ➁ Established Si and SiC companies are eager to enter the emerging GaN market; ➂ The transition from innovation to mass production for GaN presents significant challenges.
➀ Infineon has developed 300mm GaN wafers that offer 2.3 times more ICs per wafer than 200mm; ➁ The technology breakthrough is expected to be a game-changer for the industry, enabling the full potential of gallium nitride; ➂ Infineon's 300mm GaN production will position the company to shape the growing GaN market.
➀ Infineon has developed the world's first 300mm GaN wafer technology; ➁ This technology is a game-changer for the industry; ➂ Infineon is the first to master this groundbreaking technology.
➀ QPT, a Cambridge GaN power drive startup, has appointed Simon Hart, an electric motor and business specialist, as an advisor to its board. Hart has extensive experience in scaling up businesses and has a background in electric motors and automotive power management. He believes that GaN has the potential to revolutionize power electronics, and QPT's technology addresses issues like thermal management and RF interference. ➁ QPT was founded in Cambridge in 2019, focusing on GaN power drive solutions. ➂ Hart's role as an advisor is to help QPT bring GaN technology to the global market.
➀ Key players like Infineon, Renesas, and GlobalFoundries are acquiring GaN technology companies to bolster their GaN capabilities. ➁ GaN, a third-generation semiconductor, boasts higher breakdown strength, faster switching speeds, and superior thermal conductivity, ideal for high-power applications. ➂ The GaN market is poised for significant growth, driven by its superior performance in sectors such as electric vehicles, AI, and robotics over traditional silicon devices.
➀ Richardson RFPD, an Arrow Electronics company, has introduced a series of Ka-band, GaN-on-SiC MMIC power amplifiers from United Monolithic Semiconductors. ➁ These devices, available in die and plastic QFN packaging, support Ka-band SATCOM uplink and 5G FR2 bands. ➂ The amplifiers feature high power, high PAE, and high linearity, optimized for transmitting modulated waveforms up to 42 GHz.
➀ Pulsiv, a Cambridge power electronics specialist, has developed an industry's most efficient 65W USB-C GaN reference design to address thermal performance challenges in power supplies. ➁ The design, PSV-RDAD-65USB, combines Pulsiv OSMIUM technology with an industry standard QR flyback and highly optimised, ultra-compact magnetics. ➂ It aims to drastically lower operating temperatures, minimise losses, and reduce size, creating a sustainable platform for the USB-C standard.