➀ GaN is poised to become a crucial technology for power and RF applications in the near future; ➁ Established Si and SiC companies are eager to enter the emerging GaN market; ➂ The transition from innovation to mass production for GaN presents significant challenges.
Related Articles
- GaN picked for Mazda automotive power project4 months ago
- Cambridge GaN Devices completes $32m Series C5 months ago
- Next-Generation Tester For High-Power Chips4 months ago
- Strathclyde Uni gets £9m for IC packaging R&D4 months ago
- Diamond Semiconductors: The Key To Next-Generation Power Electronics5 months ago
- Thin Chips and Robust Substrates – Key Technologies for Cost-Effective Silicon Carbide Power Electronics5 months ago
- Cambridge GaN Devices demo ICeGaN in Phoenix9 months ago
- Infineon pioneers world’s first 300 mm power gallium nitride (GaN) technology – an industry game-changer10 months ago
- TSMC ceremony marks early move to 2nm mass production4 months ago
- Bellezza process could replace copper with graphene in ICs4 months ago