➀ ROHM公司推出了650V氮化镓高电子迁移率晶体管（GaN HEMT），采用紧凑且具有高效散热特性的TOLL封装。

➁ 该产品适用于工业自动化、汽车、电信和可再生能源等行业中的工程师和制造商。

➂ 新一代GaN-on-Si芯片实现了行业领先的ON电阻和输出电荷性能，有助于提高系统的小型化和能效。

➀ Three new GaN projects have been launched in China, covering the four major links of 'substrate-epitaxy-chip-module';

➁ Gaao Technology's GaN project has been settled in Zhejiang Province, focusing on GaN power devices and modules;

➂ Gaao Technology has developed a new national standard electric bicycle intelligent charging pile using GaN technology;

➃ Quanlei Optoelectronics has started a GaN epitaxy wafer/芯片 research and development and industrialization project;

➄ Guogan Xinkeshi has completed the environmental protection acceptance of its GaN substrate production base project.

➀ The development history of semiconductor materials, from the first generation to the third generation;

➁ The unique physical properties of silicon carbide (SiC) and gallium nitride (GaN), such as wide bandgap, high breakdown field, high electron mobility, and excellent thermal conductivity;

➂ The market landscape of SiC and GaN, including market size, key players, and application areas.

➀ Infineon Technologies AG 推出了新的CoolGaN G3晶体管，包括100V和80V两种型号，提供超低电阻和卓越的热性能。

➁ 新的晶体管采用行业标准封装，易于多源和与硅基设计无缝集成。

➂ 样品将于2025年4月提供，这些新设备有望简化氮化镓技术在数据通信、消费电子和工业电源应用中的采用。

➀ Cambridge GaN Devices (CGD) has completed a $32 million Series C funding round;

➁ British Patient Capital invested £5 million into CGD as part of the round;

➂ The funds will be used to expand CGD's operations and focus on the delivery of efficient GaN products.

➀ The new US vice president announced the Trump administration's robust approach to AI at the Paris AI Summit.

➁ Rohm introduced an isolated GaN gate driver with a simple-looking half-bridge application circuit.

➂ DARPA is investigating in-space manufacturing with two university research teams planning an orbital demonstration.

➀ Rohm推出了适用于GaN晶体管的8引脚隔离器，并发布了相应的半桥驱动应用电路；

➁ GaN HEMT的高侧驱动需要考虑反向电压降，以及半桥输出波形充电的过程；

➂ 通过Zener二极管和设计平衡，可以避免过充或欠充自举电容的风险。

➀ Rutronik 分销的 GaN HEMT 单通道门驱动器 BM6GD11BFJ-LB 由 Rohm 生产，具有高达 2,500Vrms 的隔离电压和 60ns 的最小输入输出延迟；

➁ 驱动器在 -40 到 +125°C 的温度范围内工作，输入侧需要 5V 电源，消耗在 250μA 到 6mA 之间；

➂ 输入逻辑阈值分别为高电平 2.0V 和低电平 0.8V，并提供输入电阻以设置输出侧 GaN 晶体管的关闭状态。

➀ The article discusses the potential of manufacturing semiconductors in space, highlighting the advantages of low gravity and vacuum environments, which can lead to higher quality and more efficient chips.

➁ It mentions the challenges, including the high cost of launching equipment to space and the logistical difficulties of setting up and maintaining facilities in space.

➂ Despite these challenges, the potential benefits of space-based semiconductor manufacturing are significant, including reduced carbon emissions, improved chip performance, and the possibility of new technological advancements.

➀ Allegro MicroSystems, Inc. 推出了两款先进的电流传感器IC——ACS37030MY 和 ACS37220MZ，专为汽车、工业和消费类应用设计。

➁ ACS37030MY 是一款全集成电流传感器IC，提供业界最快的响应时间，适用于保护宽禁带GaN功率器件。

➂ ACS37220MZ 是一款全集成霍尔效应电流传感器，具有150 kHz 带宽和故障引脚，成本效益高，适用于高效应用。

➀ EPC has introduced the EPC91104 7A 48V brushless DC motor driver evaluation board aimed at humanoid robot designers, utilizing GaN power transistors.

➁ The board measures 72 x 75mm and operates within a voltage range of 14 to 80V with peak currents up to 20A. It requires a separate signal generator board and proper heatsinking.

➂ The EPC91104 comes with four compatible control boards based on various microprocessors and can support sensorless and shaft-encoder operation, including field-oriented control.

➀ Element Six, a specialist in synthetic diamond materials, has launched Cu-Diamond, a copper-plated diamond composite material with high thermal and electrical conductivity.

➁ Designed to address thermal management challenges in advanced semiconductor devices, Cu-Diamond enables greater performance and reliability for applications like AI, HPC, and GaN RF devices.

➂ The new material offers thermal conductivity in the 800 W/mK range, optimized for high-demand applications, and can be manufactured in complex shapes for seamless integration into advanced packaging configurations.

➀ Odyssey, a US GaN company, has entered the liquidation distribution process and will distribute assets to shareholders by December 23, 2023, with each share receiving $0.11 (about RMB 0.8);

➁ Odyssey held a special shareholders' meeting on June 3, 2023, approving a comprehensive liquidation, dissolution, and asset distribution plan, resulting in the redemption and cancellation of all issued capital stocks;

➂ Odyssey had a cash balance of approximately $1.837 million (about RMB 13.37 million) as of December 17, 2023, with most funds allocated to pay the distribution of $0.11 per share, totaling $1.606 million (about RMB 11.69 million);

➃ Odyssey had previously announced the sale of most of its assets to Power Integrations for $9.52 million (about RMB 67 million) in cash, with key employees joining PI's technical department.