<p>➀ Jinfengshan Lab achieves global first 8-inch silicon-based polar GaN substrate;</p><p>➁ China's first 100nm high-performance GaN flow PDK platform;</p><p>➂ 20-meter long-distance wireless energy transmission technology;</p><p>➃ Breakthrough in GaN material, device, and industrial application;</p><p>➄ Enabling 'instant charging' for mobile phones and 'while-driving charging' for electric vehicles;</p><p>➅ Accelerating the localization of high-end devices such as 6G base stations and autonomous driving radars.</p>