<p>➀ Fraunhofer IAF developed 70nm GaN HEMT transistors with 58.6% power-added efficiency at 38 GHz, setting a record under satellite conditions; </p><p>➁ The technology enables compact active antennas for high-bitrate data transfers in Ka/Q/W-bands, supporting global satellite communication networks; </p><p>➂ Achievements validated under ESA standards and presented at EuMW 2025, highlighting applications in GEO/LEO satellites and 6G systems.</p>