<p>➀ MIT researchers developed a low-cost method to integrate gallium nitride (GaN) transistors onto standard silicon chips using copper bonding, enabling higher performance and efficient scaling;</p><p>➁ The process eliminates wafer-level bonding, reduces GaN material waste by 95%, and operates at temperatures below 400°C to prevent thermal damage;</p><p>➂ Demonstrated power amplifiers showed superior bandwidth and signal gain, with potential applications in consumer electronics, AI infrastructure, and quantum computing.</p>