➀ Infineon and Stellantis are collaborating on the power architecture for Stellantis' electric vehicles, signing major supply and capacity agreements. These agreements cover Infineon's smart power switches, SiC semiconductors, and AURIX microcontrollers. ➁ The partnership will establish a Joint Power Lab to define the next-generation scalable and intelligent power architecture. ➂ Infineon's facilities and partnerships, including its SiC fab in Malaysia and joint ventures with TSMC and ESMC, will support the increased demand for auto ICs.

This article discusses a two-phase interleaved LLC resonant converter reference design by Texas Instruments, highlighting its features such as high efficiency, compact design, and advanced control mechanisms. The design is suitable for various applications including server power supplies, telecom rectifiers, automotive charging systems, and industrial power supplies.

➀ The intern will work in the field of Power Electronics engineering under the mentorship of a technical expert. The individual will work on a function depending on their prior coursework and degree; ➁ The intern will work on electrical design projects, prepare technical proposals, execute test plans, and provide technical support to the project team; ➂ The intern will contribute to the development of advanced solutions for distribution networks automation.

➀ TDK Corporation has launched the xEVCap, a modular DC link capacitor designed for powertrain inverters in various vehicles and machinery tools; ➁ The design offers scalability and modularity, allowing for different capacitance and current needs; ➂ The capacitor is compatible with wide-bandgap power semiconductors and operates within a wide temperature range.

➀ Infineon introduces a 2kV 80A silicon carbide Schottky diode; ➁ The diode, IDYH80G200C5, is designed for high-power applications with a breakdown voltage of 2,000V; ➂ The diode features a TO-247PLUS-4-HCC package with 14mm creepage and 5.4mm clearance, targeting applications like solar inverters and EV chargers.

➀ Cambridge GaN Devices will demonstrate its ICeGaN products at the IEEE Energy Conversion Congress and Expo in Phoenix. The demos include a 3 kW PFC reference design, a QORVO motor drive evaluation kit, and a slim 100W adapter among others.➁ The company's ICeGaN products are monolithic GaN ICs with power HEMT and support circuitry.➂ The demo also features a comparison of ICeGaN versus discrete GaN circuits.

➀ The increasing demand for efficient heat dissipation in high-performance devices has led to the emergence of thermal interface materials (TIMs) as essential components in the electronics industry; ➁ TIMs are crucial for enhancing battery performance in electric vehicles, reliability in power electronics, and operational stability in data centres; ➂ The market for TIMs is growing significantly due to advancements in electronics and expanding applications in various sectors.

➀ ST is launching its fourth generation STPOWER SiC MOSFET technology optimized for traction inverters; ➁ The technology is available in 750V and 1200V classes for mid-size and compact EVs; ➂ The 750V class qualification is complete, with 1200V class expected in Q1 2025.

This article is about a PhD internship opportunity at General Electric in Bengaluru, focusing on power electronics. The internship involves working on technology programs in design, modeling, analysis, and control of advanced electrical power conversion systems, with a focus on hybrid electric and electric propulsion applications. The intern will collaborate with technologists to innovate and deliver on sustainability, safety, and quality commitments.

➀ Toshiba has launched a 5kW Isolated Bidirectional DC-DC Converter reference design using SiC MOSFETs and DAB topology for high-power applications like electric vehicle charging and solar inverters; ➁ The DAB topology allows for bidirectional high-power conversion with full bridges on both sides, enhancing efficiency and power handling; ➂ SiC MOSFETs are used to achieve high power conversion and efficiency levels, operating at higher switching frequencies than traditional IGBTs.

➀ The third HY.SH research symposium at TH Lübeck focused on hydrogen research in Schleswig-Holstein; ➁ The event aimed to present current research topics and results, as well as to foster a community of hydrogen researchers; ➂ Topics included hydrogen energy storage, power electronics, and sustainable development in agriculture and maritime industries.

➀ This article discusses a bi-directional, dual active bridge reference design, highlighting its application in electric vehicle charging and energy storage. ➁ It describes the benefits of the Dual Active Bridge converter, such as soft switching, efficiency, and bidirectional power flow. ➂ The design by Texas Instruments is noted for its advanced control, robust protection, and significant power output.

➀ GaN is poised to become a crucial technology for power and RF applications in the near future; ➁ Established Si and SiC companies are eager to enter the emerging GaN market; ➂ The transition from innovation to mass production for GaN presents significant challenges.

➀ Infineon has developed the world's first 300mm GaN wafer technology; ➁ This technology is a game-changer for the industry; ➂ Infineon is the first to master this groundbreaking technology.

➀ The 2024 Millennium Technology Prize was awarded to Professor Jayant Baliga for his contributions to the invention and development of the IGBT. ➁ The IGBT, a key power semiconductor device, has significantly reduced energy consumption and enabled efficient electricity use in societies. ➂ Baliga continues to innovate in power semiconductors, with recent inventions including the BaSIC and a bi-directional FET.

1. German research partners have successfully demonstrated the practical implementation of an aluminum nitride-based value chain for power semiconductors. 2. The new semiconductor technology based on aluminum nitride has the potential to significantly reduce losses in electrical energy conversion and high frequency transmission. 3. The consortium has successfully produced AlN/GaN high electron mobility transistors with promising electrical properties, supported by funding from the German Federal Ministry of Education and Research.

1. German research partners have demonstrated the practical implementation of an aluminum nitride-based value chain for power semiconductors. 2. The new aluminum nitride semiconductor technology has the potential to significantly reduce losses in electrical energy conversion and high-frequency transmission. 3. The consortium has successfully demonstrated the practical implementation of the value chain for aluminum nitride components in Germany and Europe.