➀ Infineon introduces a 2kV 80A silicon carbide Schottky diode; ➁ The diode, IDYH80G200C5, is designed for high-power applications with a breakdown voltage of 2,000V; ➂ The diode features a TO-247PLUS-4-HCC package with 14mm creepage and 5.4mm clearance, targeting applications like solar inverters and EV chargers.
Related Articles
- GaN picked for Mazda automotive power project4 months ago
- Next-Generation Tester For High-Power Chips4 months ago
- 2000 V SiC Schottky Diode For High-Power Applications4 months ago
- Diamond Semiconductors: The Key To Next-Generation Power Electronics5 months ago
- Thin Chips and Robust Substrates – Key Technologies for Cost-Effective Silicon Carbide Power Electronics5 months ago
- Isolated power rail generator for gate drivers8 months ago
- Galvanic gate drivers for SiC/IGBT with flexible protections8 months ago
- Infineon pioneers world’s first 300 mm power gallium nitride (GaN) technology – an industry game-changer10 months ago
- Contactless Timing for Paralympic Swimming4 months ago
- Fishing4 months ago