➀ Infineon introduces a 2kV 80A silicon carbide Schottky diode; ➁ The diode, IDYH80G200C5, is designed for high-power applications with a breakdown voltage of 2,000V; ➂ The diode features a TO-247PLUS-4-HCC package with 14mm creepage and 5.4mm clearance, targeting applications like solar inverters and EV chargers.
Related Articles
- World’s First GaN Transistor With Integrated Schottky Diode7 months ago
- GaN picked for Mazda automotive power project7 months ago
- Next-Generation Tester For High-Power Chips7 months ago
- 2000 V SiC Schottky Diode For High-Power Applications8 months ago
- Diamond Semiconductors: The Key To Next-Generation Power Electronics8 months ago
- Thin Chips and Robust Substrates – Key Technologies for Cost-Effective Silicon Carbide Power Electronics8 months ago
- Isolated power rail generator for gate drivers11 months ago
- Galvanic gate drivers for SiC/IGBT with flexible protections12 months ago
- Infineon pioneers world’s first 300 mm power gallium nitride (GaN) technology – an industry game-changerabout 1 year ago
- Towards Energy-Efficient Artificial Intelligence (AI): New Platform for Magnetic-Based AI Hardware11 days ago