➀ The third HY.SH research symposium at TH Lübeck focused on hydrogen research in Schleswig-Holstein; ➁ The event aimed to present current research topics and results, as well as to foster a community of hydrogen researchers; ➂ Topics included hydrogen energy storage, power electronics, and sustainable development in agriculture and maritime industries.

➀ This article discusses a bi-directional, dual active bridge reference design, highlighting its application in electric vehicle charging and energy storage. ➁ It describes the benefits of the Dual Active Bridge converter, such as soft switching, efficiency, and bidirectional power flow. ➂ The design by Texas Instruments is noted for its advanced control, robust protection, and significant power output.

➀ GaN is poised to become a crucial technology for power and RF applications in the near future; ➁ Established Si and SiC companies are eager to enter the emerging GaN market; ➂ The transition from innovation to mass production for GaN presents significant challenges.

➀ Infineon has developed the world's first 300mm GaN wafer technology; ➁ This technology is a game-changer for the industry; ➂ Infineon is the first to master this groundbreaking technology.

➀ The 2024 Millennium Technology Prize was awarded to Professor Jayant Baliga for his contributions to the invention and development of the IGBT. ➁ The IGBT, a key power semiconductor device, has significantly reduced energy consumption and enabled efficient electricity use in societies. ➂ Baliga continues to innovate in power semiconductors, with recent inventions including the BaSIC and a bi-directional FET.

1. German research partners have successfully demonstrated the practical implementation of an aluminum nitride-based value chain for power semiconductors. 2. The new semiconductor technology based on aluminum nitride has the potential to significantly reduce losses in electrical energy conversion and high frequency transmission. 3. The consortium has successfully produced AlN/GaN high electron mobility transistors with promising electrical properties, supported by funding from the German Federal Ministry of Education and Research.

1. German research partners have demonstrated the practical implementation of an aluminum nitride-based value chain for power semiconductors. 2. The new aluminum nitride semiconductor technology has the potential to significantly reduce losses in electrical energy conversion and high-frequency transmission. 3. The consortium has successfully demonstrated the practical implementation of the value chain for aluminum nitride components in Germany and Europe.