➀ Toshiba introduced the TLX9165T photoelectric relay with 1.8kV output MOSFETs, targeting 800V battery systems in electric vehicles;

➁ The device features back-to-back MOSFETs for bidirectional switching, ≤600Ω on-resistance (at 12mA/10mA), and an 8mm creepage-distance SO16 package compliant with automotive standards;

➂ It achieves 5kVrms isolation, meets AEC-Q101 and IEC 60664-1 certifications, and is designed for battery management and mechanical relay fault detection.

TDK has developed the world's first 'Spin Photo Detector,' a photo-spintronic conversion element that operates at a 20 picosecond speed using 800 nm light, which is over 10 times faster than conventional semiconductor-based photo detectors. This technology is a game-changer for the next generation of AI applications.

Key features of the Spin Photo Detector include ultra-high-speed response, broad light detection, and energy efficiency, making it suitable for applications in AR/VR smart glasses, high-speed image sensors, and aerospace.

➀ IHP and Nagoya University have been collaborating on research in the fields of SiGe epitaxy, nanotechnology, and advanced semiconductor and optoelectronic devices.

➁ The partnership aims to develop new epitaxy techniques and optimize semiconductor interfaces for miniaturization of electronic devices.

➂ The collaboration includes academic exchanges and a visiting professorship to strengthen academic ties.

The IHP - Leibniz-Institut für innovative Mikroelektronik has been closely collaborating with the University of Nagoya, Japan, for many years. The partnership involves research collaboration in the fields of Silicon-Germanium Epitaxy (SiGe), Nanotechnology, and advanced semiconductor and optoelectronic devices.

The partners are developing new epitaxy techniques and methods to optimize semiconductor interfaces, enabling the miniaturization of electronic devices. One key element is the investigation of SiGe epitaxy processes using the IHP technology platform. The properties of Silicon-Germanium nanowires and nanoparticles are being studied for use in energy-efficient transistors and lasers on silicon. Other research topics include the luminescence properties of Si and Ge nanostructures and innovative solutions for sub-10nm technologies.

Prof. Dr. Andreas Mai, Head of the Technology Department at IHP, says, 'We are very excited about this collaboration as it allows us to benefit from the unique resources and experiences of both parties. The future of microelectronics and silicon photonics is being advanced through such international partnerships.' Dr. Yuji Yamamoto, Project Leader at IHP, adds, 'Our research on SiGe nanostructure epitaxy enables the development of energy-efficient transistors and light sources that can revolutionize quantum electronics and optoelectronics.'

➀ IHP, in collaboration with the University of Nagoya, is engaged in research on SiGe epitaxy, nanotechnology, and advanced semiconductor and optoelectronic devices.

➁ The partnership aims to optimize semiconductor interfaces through new epitaxial techniques and methods to enable the miniaturization of electronic devices.

➂ The research focuses on SiGe epitaxy processes, properties of silicon-germanium nanowires and nanoparticles for energy-efficient transistors and lasers, and luminescence properties of Si and Ge nanostructures.

➀ The CiS e.V. and the CiS Research Institute for Microsensorics are seeking young talents to participate in the Silicon Science Award 2025, which recognizes innovative research in microsystem technology, optoelectronics, and quantum technology.

➁ The award is given every two years for outstanding bachelor's, master's, and doctoral theses.

➂ The competition focuses on topics such as silicon-based sensorics, innovative packaging and interconnection technologies, optoelectronic microsystems, and quantum technologies.

➀ Researchers have explored a novel approach to boost thermal transport across solid interfaces by activating hyperbolic phonon-polariton (HPhP) modes in hexagonal boron nitride (hBN).

➁ These hybrid light–vibration modes can transfer energy at rates far exceeding conventional phonon–phonon conduction.

➂ The study shows that hBN can act as a high-performance medium for ultrafast thermal dissipation, with potential applications in high-frequency or high-power devices.

Alphawave Semi is sampling its portfolio of optoelectronics products targeting the high-speed interconnect semiconductor market, expected to exceed $4 billion by 2028. The portfolio includes DSPs for PAM4 and emerging Coherent-lite modulation, using PAM4 SerDes with its WidEye DSP architecture and EyeQ diagnostic technology. The 800G and 1.6T interconnect products support up to 20km optical reach based on PAM4 and Coherent-lite solutions.

➀ Researchers have developed a novel method to enhance the efficiency of perovskite light-emitting diodes (PeLEDs) using polycaprolactone-silver nanoparticles (PCL@AgNPs-P) as an emission gain layer, improving luminance and external quantum efficiency (EQE).

➁ The innovation leverages Förster resonance energy transfer (FRET) and the Purcell effect, offering a cost-effective and scalable solution for high-performance PeLED applications.

➂ This breakthrough could accelerate advancements in high-performance displays, optical communication, laser optics, and quantum photonics, maintaining the purity and stability of the perovskite emissive layer while simplifying fabrication processes.

➀ Researchers at the Institute of Organic Chemistry, University of Vienna, have presented an innovative approach to the synthesis of Azaparacyclophanes (APCs), a class of highly developed ring-shaped molecular structures with great potential for materials science.

➁ The new CTM method uses the 'Pd-catalyzed Buchwald-Hartwig cross-coupling reaction' to create π-conjugated cyclic structures, offering a direct and efficient way to produce APCs.

➂ The method is flexible, allowing the production of APCs with different ring sizes and functional groups, and is scalable and reproducible.

➀ Scientists in South Korea have developed a conductive-bridge interlayer contact, overcoming efficiency limitations in 2D semiconductor-based photodiodes.

➁ This interlayer, comprising an insulating oxide material embedded with gold nanoclusters, enhances charge transport and mitigates Fermi level pinning.

➂ The technology was implemented in a tungsten disulfide photodiode, achieving improved photoresponsivity, dynamic range, and power conversion efficiency.