<p>➀ Scientists in South Korea have developed a conductive-bridge interlayer contact, overcoming efficiency limitations in 2D semiconductor-based photodiodes.</p><p>➁ This interlayer, comprising an insulating oxide material embedded with gold nanoclusters, enhances charge transport and mitigates Fermi level pinning.</p><p>➂ The technology was implemented in a tungsten disulfide photodiode, achieving improved photoresponsivity, dynamic range, and power conversion efficiency.</p>
Related Articles
- Alphawave Semi sampling photonics interconnect ICs for hyperscalers2 months ago
- Controlling Light Color and Frequency for Advanced Technologies3 months ago
- UK PhD students learn cleanroom skills at Swansea University CISM3 months ago
- Leti’s FAMES pilot line to add R&D initiatives4 months ago
- Sustainable IT Solutions through Energy-Efficient Storage Innovation4 months ago
- Harnessing Biology for Sustainable Energy Production5 months ago
- The Role of Boron in the Creation of 2D Nanostructured Gold Films5 months ago
- European Chiplet Innovation: APECS Pilot Line Starts Operation under the EU Chips Act5 months ago
- Government running semiconductor trip to Korea5 months ago
- Automated Image Acquisition and Analysis of Graphene and Hexagonal Boron Nitride Structures7 months ago