➀ Imec developed a GaN MOSHEMT on silicon with record 27.8dBm output power and 66% efficiency at 13GHz/5V, optimized for 6G FR3 band (7-24GHz);
➁ Achieved ultra-low 0.024Ω·mm contact resistance using regrown n⁺(In)GaN, potentially boosting output power density by 70%;
➂ Addresses limitations of current GaAs and SiC-based solutions, enabling scalable silicon platforms for future 6G mobile devices.