<p>➀ Imec developed a GaN MOSHEMT on silicon with record 27.8dBm output power and 66% efficiency at 13GHz/5V, optimized for 6G FR3 band (7-24GHz); </p><p>➁ Achieved ultra-low 0.024Ω·mm contact resistance using regrown n⁺(In)GaN, potentially boosting output power density by 70%; </p><p>➂ Addresses limitations of current GaAs and SiC-based solutions, enabling scalable silicon platforms for future 6G mobile devices.</p>