<p>➀ Infineon is planning a 100V GaN transistor with an integrated Schottky diode for hard-switched power topologies; </p><p>➁ The lack of body diode in GaN-based topologies can lead to higher power losses due to the larger effective body diode voltage; </p><p>➂ The new device is designed to reduce dead-time and maintain efficiency by connecting a Schottky diode in anti-parallel with the GaN transistor.</p>