<p>➀ Fraunhofer IAF developed a monolithic bidirectional 1200 V GaN switch with integrated free-wheeling diodes using GaN-on-insulator technology, enhancing efficiency in EV chargers and renewable energy systems;</p><p>➁ The institute also demonstrated a single-gate GaN HEMT as a bidirectional switch for low-voltage 3-level converters, simplifying control in multi-level topologies;</p><p>➂ These innovations, along with advancements in GaN power electronics across 48 V to 1200 V classes, will be showcased at PCIM Europe 2025, highlighting Europe's progress in energy transition technologies.</p>