➀ The resolution in lithography is influenced by image blur in addition to wavelength and numerical aperture, which impacts image contrast and sensitivity to stochastic effects.

➁ Blur originates from various factors including flare, image fading, stage desynchronization, and electron behavior.

➂ Incorporating electron blur into lithography models is crucial for improving image resolution and reducing defectivity in advanced semiconductor manufacturing.

➀ EUV和DUV在20nm间距下都是可行的选项；

➁ 在20nm间距下，EUV和DUV方法可以实现类似的特征尺寸和分辨率；

➂ 即使在EUV光刻中，2nm节点的任何双曝光方案仍然需要成像10nm线宽。