➀ The resolution limit of EUV lithography is affected by electron blur and stochastic effects; ➁ Stochastic behavior arises from variations in electron scattering and follows Poisson statistics; ➂ As pitch decreases, higher doses are required to maintain image quality, affecting throughput and necessitating new resist materials.

➀ Stochastic effects below 50 nm pitches require reevaluation of EUV lithography resolution limits; ➁ LELE multipatterning does not sufficiently mitigate stochastic effects due to small critical dimensions; ➂ Comparative performance analysis shows slight improvement at 60 nm pitch, but stochastic defect rates remain an issue.

➀ EUV光刻受随机效应影响，导致吸收光子数量变化，可能产生缺陷；➁ EUV系统的随机照明角度导致光子分布不均，造成图像偏移和精确光刻图案的挑战；➂ 减少pupil填充可以缓解随机失真，但会严重限制光刻系统的吞吐量。