➀ NY CREATES and Fraunhofer IPMS signed a Joint Development Agreement (JDA) to advance research on 300mm wafer-based data storage technologies, focusing on ferroelectric memory devices;

➁ The collaboration aims to combine expertise in materials evaluation and process development for energy-efficient, CMOS-compatible memory solutions applicable to neuromorphic computing;

➂ This builds on a prior 2023 Memorandum of Understanding, reinforcing transatlantic cooperation to drive semiconductor innovation and economic growth.

➀ NY CREATES and Fraunhofer IPMS formalized a Joint Development Agreement (JDA) to co-develop advanced 300mm wafer-scale memory devices, focusing on ferroelectric memory technology using hafnium oxide (HfO₂);

➀ The collaboration aims to enhance energy-efficient, scalable memory solutions for neuromorphic computing applications, leveraging Fraunhofer IPMS's expertise in HfO₂-based memory and NY CREATES' Albany NanoTech Complex facilities;

➂ The partnership builds on prior agreements and aligns with U.S. initiatives like the CHIPS for America EUV Accelerator to strengthen semiconductor R&D leadership and economic growth.