<p>➀ NY CREATES and Fraunhofer IPMS formalized a Joint Development Agreement (JDA) to co-develop advanced 300mm wafer-scale memory devices, focusing on ferroelectric memory technology using hafnium oxide (HfO₂);</p><p>➀ The collaboration aims to enhance energy-efficient, scalable memory solutions for neuromorphic computing applications, leveraging Fraunhofer IPMS's expertise in HfO₂-based memory and NY CREATES' Albany NanoTech Complex facilities;</p><p>➂ The partnership builds on prior agreements and aligns with U.S. initiatives like the CHIPS for America EUV Accelerator to strengthen semiconductor R&D leadership and economic growth.</p>