<p>➀ Researchers achieved record-high electronic quality in graphene using "proximity screening" with hexagonal boron nitride (hBN) layers, reducing charge fluctuations and achieving carrier mobility up to 5.7×10⁷ cm²/Vs;</p><p>➀ The ultrathin hBN-graphene heterostructure suppressed noise and enabled quantum phenomena like the quantum Hall effect, with potential applications in high-speed transistors and quantum technologies;</p><p>➂ The scalable fabrication method paves the way for disorder-free 2D material devices compatible with existing semiconductor processes.</p>