➀ The Fraunhofer IZM leads a project to develop new simulation models for microelectronics reliability testing; ➁ The project aims to reduce the time and cost of qualification tests through advanced simulation techniques; ➂ The models will be reusable and adaptable to more complex systems, enhancing reliability without compromising accuracy.

➀ High Temperature Reverse Bias (HTRB) testing evaluates the long-term stability of semiconductor devices like IGBTs under high temperature and reverse bias conditions. ➁ The test monitors leakage current to identify potential weaknesses in edge structures and passivation layers. ➂ HTRB testing follows the IEC 60747-9 standard, ensuring reliability and comparability of test results. ➃ The test conditions include a duration of 1000 hours, voltage at 95% of the maximum rated voltage, and temperature between 125°C and 145°C. ➄ Continuous monitoring of leakage current during the test helps assess device health and detect any degradation.