<p>➀ A non-destructive X-ray imaging method with a 12-nm beam analyzed structural deformations in nanosheets used in Gate-All-Around Field Effect Transistors (GAAFETs); </p><p>➁ Two deformation mechanisms were identified: long-range (lattice mismatch and edge relaxation) and short-range (linked to nanosheet layering); </p><p>➂ IBM and Brookhaven's NSLS-II collaboration provides insights to enhance reliability and performance prediction for nanoscale electronics.</p>