<p>➀ Researchers at TU Wien, JKU Linz, and Bergakademie Freiberg developed a groundbreaking Silicon-Germanium (SiGe) transistor using modulation-acceptor doping (MAD), which replaces traditional semiconductor doping with a doped oxide layer, eliminating material impurities;</p><p>➁ The technology enables 4000x higher conductivity, improved low-temperature performance (critical for quantum chips), reduced energy consumption, and mitigates variability issues in nanoscale transistors;</p><p>➂ This advancement addresses challenges in quantum computing integration, where traditional doping fails under extreme cold, and paves the way for faster, energy-efficient nanoelectronics and quantum systems.</p>