<p>➀ The importance of photoresist in semiconductor manufacturing and the necessity for resolution scaling to utilize new architectures and materials.</p><p>➁ The discussion on yield challenges, particularly with edge placement error (EPE) and line edge roughness (LER), and the need for improved understanding and tools to mitigate these issues.</p><p>➂ The introduction of directed self-assembly (DSA) as a strategy to reduce line/space photoresist correction errors and its application in 18 nm and 21 nm metal pitch.</p><p>➃ The need for new photoresists to match node processes at 12 nm pitch and the impact of defect density on EUV chip cost.</p><p>➄ The importance of high-throughput experimental methods, chemical analysis of random defects, and 3D length scale detection in process change exploration.</p><p>➅ The industry's demand for high quantum yield photoresists, defect formation analysis, and dry development techniques for organic photoresists.</p>