➀ Foxconn's research institute and the team from National Yang Ming Chiao Tung University have developed a high-frequency, high-efficiency laser driver circuit based on gallium nitride transistor complementary architecture. ➁ The research team has applied for patents related to the complementary pulse laser driver method using gallium nitride transistors. ➂ The developed high-frequency short-pulse laser driver features a switching frequency of up to 50MHz, pulse width less than 10 nanoseconds, and peak power of 50W, with a conversion efficiency of 75%.
Related Articles
- MEMS Vector Scan Module with Enhanced Vibration and Shock Resistance for Space Applications3 months ago
- Qualcomm files countersuit against Arm5 months ago
- Symposium on VLSI Technology & Circuits in Kyoto,5 months ago
- World's first drone system for fighting lightning protects cities and infrastructure5 months ago
- TDK develops 20ps Spin Photo Detector5 months ago
- Cooling chips with lasers: Innovative cooling method removes heat precisely from hot spots, recycles heat into energy5 months ago
- New 'DRAM+' memory designed to provide DRAM performance with SSD-like storage capabilities, uses FeRAM tech5 months ago
- Wall Street Gave Up On Intel - Should You Bet Against The Crowd5 months ago
- Marvell selling Automotive Ethernet unit to Infineon for $2.5bn5 months ago
- Analysts question TSMC-Intel jv plan5 months ago