<p>➀ Researchers at the University of Würzburg developed a topological insulator that operates at higher temperatures (around -213°C), overcoming previous limitations of functioning near absolute zero;</p><p>➁ The material uses a three-layer quantum well structure (InAs/GaInSb/InAs) to enhance band-gap energy and structural symmetry, enabling robust spin-polarized electron transport;</p><p>➂ This breakthrough enables compatibility with existing silicon-chip technology, paving the way for energy-efficient topological electronics in practical applications.</p>