<p>➀ Nexperia introduces 80 V and 100 V ASFETs optimized for dynamic current sharing in high-power 48 V systems, addressing unbalanced current distribution in parallel MOSFET configurations;</p><p>➁ The PSMN1R9-80SSJ and PSMN2R3-100SSJ models feature a 50% lower current delta (up to 50 A/device) and a tight VGS(th) window of 0.6 V, eliminating costly voltage-matching requirements;</p><p>➂ With ultra-low RDS(on) values (1.9 mΩ and 2.3 mΩ) and rugged packaging, the MOSFETs enhance efficiency and reliability in automotive electrification and industrial motor-drive applications.</p>