<p>➀ Fraunhofer IAF developed a monolithic bidirectional 1200V GaN switch using GaN-on-Insulator technology, integrating two freewheeling diodes to enhance efficiency in EV chargers, renewable energy systems, and automotive powertrains; </p><p>➁ The team also demonstrated a single-gate GaN HEMT as a bidirectional switch for low-voltage multi-level converters, simplifying transistor control compared to dual-gate solutions; </p><p>➂ These innovations, presented at PCIM Europe 2025, highlight advancements in GaN power electronics across 48V to 1200V applications, including plans for 1700V-class devices and modular integration.</p>