<p>➀ Silicon carbide (SiC) offers significant technical advantages for power electronics, but its cost remains a barrier to market penetration. The Fraunhofer Institutes are developing key technologies to reduce material losses and device thickness while increasing the thermomechanical stability of SiC chips.</p><p>➁ The ThinSiCPower project aims to produce cost-effective SiC substrates and thinner SiC chips using more resource-efficient processing technologies, such as laser separation of SiC crystals and bonding onto a carrier substrate.</p><p>➂ The project partners are Fraunhofer ISE, ENAS, IWM, and IISB, with the goal of reducing SiC device costs by 25% and SiC design costs by 25% through increased load cycle stability.</p>