➀ A comparison between Huawei's and UCSB's silicon-based epitaxial quantum dot lasers is discussed; ➁ The reliability of quantum dot lasers is higher than that of quantum well lasers under the same technical conditions; ➂ The reliability of quantum dot lasers on GaAs substrates is lower due to lattice mismatch and immature growth technology; ➃ The differences in epitaxial growth technology between Huawei and UCSB are highlighted; ➄ The quality of crystal interfaces and defect densities are compared.