➀ CEA-Leti has demonstrated a scalable hafnia-zirconia-based FeRAM platform integrated into the 22 nm FD-SOI node's BEOL. This is a significant advance in ferroelectric memory technology, improving scalability for embedded applications and positioning FeRAM as a competitive memory solution for advanced nodes. ➁ Current embedded FeRAM products use perovskite materials that are not CMOS compatible and cannot scale beyond 130 nm. The new HfO2-based thin films are CMOS compatible and scalable, offering new possibilities for embedded FeRAM. ➂ The technology is expected to enable faster, more energy-efficient, and cost-effective memory solutions in embedded systems like IoT, mobile devices, and edge computing.