<p>➀ Researchers at the University of Bristol developed gallium nitride (GaN) radio frequency amplifiers, pushing performance boundaries to enable 6G wireless communication;</p><p>➁ The discovery of a latch-effect in GaN devices and the use of superlattice castellated field effect transistors (SLCFETs) significantly improved radio frequency capabilities in the W-band (75–110 GHz);</p><p>➂ This breakthrough could facilitate future technologies like real-time remote healthcare and self-driving cars through enhanced semiconductor reliability and power density.</p>